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Nanodots and microwires of ZrO2 grown on LaAlO3 by photo-assisted metal-organic chemical vapor deposition |
Feng Guo(郭峰), Xin-Sheng Wang(汪薪生), Shi-Wei Zhuang(庄仕伟), Guo-Xing Li(李国兴), Bao-Lin Zhang(张宝林), Pen-Chu Chou(周本初) |
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China |
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Abstract ZrO2 nanodots are successfully prepared on LaAlO3 (LAO) (100) substrates by photo-assisted metal-organic chemical vapor deposition (MOCVD). It is indicated that the sizes and densities of ZrO2 nanodots are controllable by modulating the growth temperature, oxygen partial pressure, and growth time. Meanwhile, the microwires are observed on the surfaces of substrates. It is found that there is an obvious competitive relationship between the nanodots and the microwires. In a growth temperature range from 500 ℃ to 660 ℃, the microwires turn longest and widest at 600 ℃, but in contrast, the nanodots grow into the smallest diameter at 600 ℃. This phenomenon could be illustrated by the energy barrier, decomposition rate of Zr(tmhd)4, and mobility of atoms. In addition, growth time or oxygen partial pressure also affects the competitive relationship between the nanodots and the microwires. With increasing oxygen partial pressure from 451 Pa to 752 Pa, the microwires gradually grow larger while the nanodots become smaller. To further achieve the controllable growth, the coarsening effect of ZrO2 is modified by varying the growth time, and the experimental results show that the coarsening effect of microwires is higher than that of nanodots by increasing the growth time to quickly minimize ZrO2 energy density.
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Received: 04 August 2015
Revised: 07 October 2015
Accepted manuscript online:
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PACS:
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51002063) and the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun City, China (Grant No. 12ZX68). |
Corresponding Authors:
Guo-Xing Li
E-mail: liguoxing@jlu.edu.cn
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Cite this article:
Feng Guo(郭峰), Xin-Sheng Wang(汪薪生), Shi-Wei Zhuang(庄仕伟), Guo-Xing Li(李国兴), Bao-Lin Zhang(张宝林), Pen-Chu Chou(周本初) Nanodots and microwires of ZrO2 grown on LaAlO3 by photo-assisted metal-organic chemical vapor deposition 2016 Chin. Phys. B 25 028103
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