Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation

doi:10.1088/1674-1056/25/3/038101

Abstract Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In_0.27Ga_0.73As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two <110> directions using InAlGaAs buffer layers on 7° misoriented GaAs (001) substrates. To understand the control mechanism of symmetric properties of In_0.27Ga_0.73As layers by the substrate miscut angles, In_0.27Ga_0.73As grown on 2° and 15° misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60° misfit dislocations were found to be the reasons for asymmetry properties of In_0.27Ga_0.73As grown on 2° and 15° substrates, respectively. Photoluminescence results proved that the In_0.27Ga_0.73As with symmetric properties has better optical properties than the In_0.27Ga_0.73As with asymmetric properties at room temperature. These results imply that high quality metamorphic In_0.27Ga_0.73As can be achieved with controllable isotropic electron transport property.

Keywords: In_0.27Ga_0.73As substrate misorientation symmetry MOCVD

Received: 15 October 2015
Revised: 05 November 2015
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.05.-t	(Specific materials: fabrication, treatment, testing, and analysis)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376065) and the Suzhou Science and Technology Project, China (Grant No. ZXG2013044).

Corresponding Authors: Jian-Rong Dong
E-mail: jrdong2007@sinano.ac.cn

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Shu-Zhen Yu(于淑珍), Jian-Rong Dong(董建荣), Yu-Run Sun(孙玉润), Kui-Long Li(李奎龙),Xu-Lu Zeng(曾徐路), Yong-Ming Zhao(赵勇明), Hui Yang(杨辉) Control of symmetric properties of metamorphic In_0.27Ga_0.73As layers by substrate misorientation 2016 Chin. Phys. B 25 038101

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Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation

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Control of symmetric properties of metamorphic In_0.27Ga_0.73As layers by substrate misorientation