Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (9): 097307    DOI: 10.1088/1674-1056/23/9/097307
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range
Wu Meia b, Zheng Da-Yongc, Wang Yuanb, Chen Wei-Weib, Zhang Kaia b, Ma Xiao-Huab, Zhang Jin-Chenga b, Hao Yuea b
a School of Microelectronics, Xidian University, Xi'an 710071, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
c The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510610, China

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