Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (9): 097308    DOI: 10.1088/1674-1056/23/9/097308
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
Jiang Chao, Lu Hai, Chen Dun-Jun, Ren Fang-Fang, Zhang Rong, Zheng You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

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