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CN 11-5639/O4
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Other articles related with "85.30.Kk":
48502 Chao Yang, Hongwei Liang, Zhenzhong Zhang, Xiaochuan Xia, Heqiu Zhang, Rensheng Shen, Yingmin Luo, Guotong Du
  Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3
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127302 Hui Wang, Ling-Li Jiang, Xin-Peng Lin, Si-Qi Lei, Hong-Yu Yu
  A simulation study of field plate termination in Ga2O3 Schottky barrier diodes
    Chin. Phys. B   2018 Vol.27 (12): 127302-127302 [Abstract] (200) [HTML 1 KB] [PDF 650 KB] (90)
128502 Siqi Hu, Ruijuan Tian, Xiaoguang Luo, Rui Yin, Yingchun Cheng, Jianlin Zhao, Xiaomu Wang, Xuetao Gan
  Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors
    Chin. Phys. B   2018 Vol.27 (12): 128502-128502 [Abstract] (230) [HTML 1 KB] [PDF 1749 KB] (133)
66106 Zheng-Peng Pang, Xin Wang, Jian Chen, Pan Yang, Yang Zhang, Yong-Hui Tian, Jian-Hong Yang
  Non-monotonic dependence of current upon i-width in silicon p-i-n diodes
    Chin. Phys. B   2018 Vol.27 (6): 66106-066106 [Abstract] (139) [HTML 0 KB] [PDF 747 KB] (108)
18502 Chen Wang, Yihong Xu, Cheng Li, Haijun Lin
  Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation
    Chin. Phys. B   2018 Vol.27 (1): 18502-018502 [Abstract] (153) [HTML 1 KB] [PDF 552 KB] (119)
98503 Xiao-Ran Meng, Yun-Xia Ping, Wen-Jie Yu, Zhong-Ying Xue, Xing Wei, Miao Zhang, Zeng-Feng Di, Bo Zhang, Qing-Tai Zhao
  Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing
    Chin. Phys. B   2017 Vol.26 (9): 98503-098503 [Abstract] (156) [HTML 0 KB] [PDF 1415 KB] (124)
87308 Linna Zhao, Peihong Yu, Zixiang Guo, Dawei Yan, Hao Zhou, Jinbo Wu, Zhiqiang Cui, Huarui Sun, Xiaofeng Gu
  Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress
    Chin. Phys. B   2017 Vol.26 (8): 87308-087308 [Abstract] (173) [HTML 1 KB] [PDF 1376 KB] (164)
38504 Xia Wei, Fa-Guang Yan, Chao Shen, Quan-Shan Lv, Kai-You Wang
  Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
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28102 I Orak, A Kocyigit, Ş Alındal
  Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage
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128501 Li-Zhong Zhang, Yuan Wang, Yan-Dong He
  Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress
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108503 Zhang Li-Zhong, Wang Yuan, Lu Guang-Yi, Cao Jian, Zhang Xing
  A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
    Chin. Phys. B   2015 Vol.24 (10): 108503-108503 [Abstract] (223) [HTML 1 KB] [PDF 1613 KB] (283)
128503 Li Jun-Shuai, Zhang Xia, Yan Xin, Chen Xiong, Li Liang, Cui Jian-Gong, Huang Yong-Qing, Ren Xiao-Min
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    Chin. Phys. B   2014 Vol.23 (12): 128503-128503 [Abstract] (293) [HTML 1 KB] [PDF 2390 KB] (362)
97308 Jiang Chao, Lu Hai, Chen Dun-Jun, Ren Fang-Fang, Zhang Rong, Zheng You-Dou
  Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
    Chin. Phys. B   2014 Vol.23 (9): 97308-097308 [Abstract] (222) [HTML 1 KB] [PDF 1081 KB] (642)
18506 Ahmet Kaya, Sedat Zeyrek, Sait Eren San, Şmsettin Altindal
  Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range
    Chin. Phys. B   2014 Vol.23 (1): 18506-018506 [Abstract] (147) [HTML 1 KB] [PDF 1510 KB] (416)
108502 Mert Yíldírím, Perihan Durmuş, Şemsettin Altíndal
  Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi4Ti3O12/p–Si structures by using the admittance spectroscopy method
    Chin. Phys. B   2013 Vol.22 (10): 108502-108502 [Abstract] (192) [HTML 1 KB] [PDF 390 KB] (487)
128502 M. Gökcen, M. Yildirim
  Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height
    Chin. Phys. B   2012 Vol.21 (12): 128502-128502 [Abstract] (538) [HTML 1 KB] [PDF 534 KB] (457)
68502 Wang Tao, Guo Qing, Liu Yan, Yun Janggn
  Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS
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117301 Chen Feng-Ping, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Wang Yue-Hu, Chen Wen-Hao
  Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode
    Chin. Phys. B   2011 Vol.20 (11): 117301-117301 [Abstract] (1338) [HTML 0 KB] [PDF 413 KB] (2804)
118401 Huang Jian-Hua, Lü Hong-Liang, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Chen Feng-Ping, Song Qing-Wen
  Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode
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67102 Zhang Fa-Sheng, Li Xin-Ran
  Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques
    Chin. Phys. B   2011 Vol.20 (6): 67102-067102 [Abstract] (909) [HTML 0 KB] [PDF 473 KB] (999)
107101 Pu Hong-Bin, Cao Lin, Chen Zhi-Ming, Ren Jie, Nan Ya-Gong
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    Chin. Phys. B   2010 Vol.19 (10): 107101-107101 [Abstract] (1121) [HTML 0 KB] [PDF 280 KB] (755)
107304 Nan Ya-Gong, Pu Hong-Bin, Cao Lin, Ren Jie
  Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties
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57303 Liu Hong-Xia, Wu Xiao-Feng, Hu Shi-Gang, Shi Li-Chun
  Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures
    Chin. Phys. B   2010 Vol.19 (5): 57303-057303 [Abstract] (922) [HTML 0 KB] [PDF 735 KB] (631)
47201 Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Zhang Qian, Guo Hui, Li Zhi-Yun, Wang Zhong-Xu
  Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension
    Chin. Phys. B   2010 Vol.19 (4): 47201-047201 [Abstract] (1036) [HTML 0 KB] [PDF 298 KB] (609)
47305 Chen Feng-Ping, Zhang Yu-Ming, Zhang Yi-Men, L\"u Hong-Liang, Song Qing-Wen
  Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes
    Chin. Phys. B   2010 Vol.19 (4): 47305-047305 [Abstract] (1013) [HTML 0 KB] [PDF 342 KB] (917)
47310 Li Qiu-Zhu, Wang Kai-Qun, Jian Ao-Qun, Liu Xin, Zhang Bin-Zhen
  Pressure effect study on the IV property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
    Chin. Phys. B   2010 Vol.19 (4): 47310-047310 [Abstract] (1014) [HTML 0 KB] [PDF 363 KB] (507)
36803 Wang Yue-Hu, Zhang Yi-Men, Zhang Yu-Ming, Zhang Lin, Jia Ren-Xu, Chen Da
  SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes
    Chin. Phys. B   2010 Vol.19 (3): 36803-036803 [Abstract] (1202) [HTML 0 KB] [PDF 1651 KB] (792)
17203 Wang Shou-Guo, Zhang Yan, Zhang Yi-Men, Zhang Yu-Ming
  Characterization of ion-implanted 4H-SiC Schottky barrier diodes
    Chin. Phys. B   2010 Vol.19 (1): 17203-017203 [Abstract] (960) [HTML 0 KB] [PDF 344 KB] (844)
5474 Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Lü Hong-Liang, Chen Feng-Ping, Zheng Qing-Li
  Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes
    Chin. Phys. B   2009 Vol.18 (12): 5474-5478 [Abstract] (1244) [HTML 0 KB] [PDF 134 KB] (896)
5029 Li Fei, Zhang Xiao-Ling, Duan Yi, Xie Xue-Song, Lü Chang-Zhi
  High-temperature current conduction through three kinds of Schottky diodes
    Chin. Phys. B   2009 Vol.18 (11): 5029-5033 [Abstract] (1182) [HTML 0 KB] [PDF 712 KB] (646)
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