AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

doi:10.1088/1674-1056/23/2/027301

Abstract The influence of atomic layer deposition parameters on the negative charge density in AlO_x film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10¹² cm^-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software (PC1D). With AlO_x passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.

Keywords: AlO_x atomic layer deposition p-type negative charge density solar cell analyzing software

Received: 01 August 2013
Revised: 27 August 2013
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	88.40.H-	(Solar cells (photovoltaics))
	88.40.jj	(Silicon solar cells)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y2YF028001), and the National High-Tech R & D Program of China (Grant No. 2012AA052401).

Corresponding Authors: Liu Bang-Wu
E-mail: liubangwu@ime.ac.cn

About author: 73.40.Lq; 88.40.H-; 88.40.jj

Cite this article:

Qiu Hong-Bo (仇洪波), Li Hui-Qi (李惠琪), Liu Bang-Wu (刘邦武), Zhang Xiang (张祥), Shen Ze-Nan (沈泽南) AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell 2014 Chin. Phys. B 23 027301

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AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

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AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell