Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition

doi:10.1088/1674-1056/abaee7

Abstract

Vanadium oxide films were grown by atomic layer deposition using the tetrakis[ethylmethylamino] vanadium as the vanadium precursor and H₂O as the oxide source. The effect of the source temperature on the quality of vanadium oxide films and valence state was investigated. The crystallinity, surface morphology, film thickness, and photoelectric properties of the films were characterized by x-ray diffraction, atomic force microscope, scanning electron microscope, I–V characteristics curves, and UV–visible spectrophotometer. By varying the source temperature, the content of V₆O₁₁, VO₂, and V₆O₁₃ in the vanadium oxide film increased, that is, as the temperature increased, the average oxidation state generally decreased to a lower value, which is attributed to the rising of the vapor pressure and the change of the ionization degree for organometallics. Meanwhile, the root-mean-square roughness decreased and the metal–insulator transition temperature reduced. Our study is great significance for the fabrication of vanadium oxide films by atomic layer deposition.

Keywords: vanadium oxide films atomic layer deposition source temperature valence state

Received: 16 January 2020
Revised: 30 July 2020
Accepted manuscript online: 13 August 2020

PACS:	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	61.50.Nw	(Crystal stoichiometry)
	61.05.cp	(X-ray diffraction)

Corresponding Authors: ^†Corresponding author. E-mail: wccwss@foxmail.com ^‡Corresponding author. E-mail: zpweicust@126.com

About author:

†Corresponding author. E-mail: wccwss@foxmail.com

‡Corresponding author. E-mail: zpweicust@126.com

* Project supported by the National Natural Science Foundation of China (Grant Nos. 11674038, 61674021, 61704011, and 61904017), the Developing Project of Science and Technology of Jilin Province, China (Grant Nos. 20170520118JH and 20160520027JH), and the Youth Foundation of Changchun University of Science and Technology (Grant No. XQNJJ-2018-18).

Cite this article:

Bingheng Meng(孟兵恒), Dengkui Wang(王登魁)†, Deshuang Guo(郭德双), Juncheng Liu(刘俊成), Xuan Fang(方铉), Jilong Tang(唐吉龙), Fengyuan Lin(林逢源), Xinwei Wang(王新伟), Dan Fang(房丹), and Zhipeng Wei(魏志鹏)‡ Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition 2020 Chin. Phys. B 29 107102

Fig. 1.

(a)–(c) The AFM images of samples A–C. (d)–(f) The SEM micrographs in cross-sectional view of samples A–C.

Fig. 2.

The XRD pattern of VO_x films deposited on sapphire substrate with different source temperatures: (a) 90 °C, (b) 100 °C, and (c) 110 °C.

Table 1.

Variation of the ratio of the strongest integrated intensity of each vanadium oxide in the film to the strongest integrated intensity of the substrate peak with the source temperature.

Fig. 3.

(a) The absorption spectra and (b) transmission spectra of samples A–C.

Fig. 4.

The relation of conductivity and temperature. The insets show the I–V curves at 30 °C and 208 °C for samples A–C.

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Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition

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