CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell |
Qiu Hong-Bo (仇洪波)a b, Li Hui-Qi (李惠琪)a, Liu Bang-Wu (刘邦武)b, Zhang Xiang (张祥)b, Shen Ze-Nan (沈泽南)b |
a School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China; b Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×1012 cm-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software (PC1D). With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.
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Received: 01 August 2013
Revised: 27 August 2013
Accepted manuscript online:
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PACS:
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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88.40.H-
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(Solar cells (photovoltaics))
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88.40.jj
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(Silicon solar cells)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y2YF028001), and the National High-Tech R & D Program of China (Grant No. 2012AA052401). |
Corresponding Authors:
Liu Bang-Wu
E-mail: liubangwu@ime.ac.cn
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About author: 73.40.Lq; 88.40.H-; 88.40.jj |
Cite this article:
Qiu Hong-Bo (仇洪波), Li Hui-Qi (李惠琪), Liu Bang-Wu (刘邦武), Zhang Xiang (张祥), Shen Ze-Nan (沈泽南) AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell 2014 Chin. Phys. B 23 027301
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