Chin. Phys. B
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Chin. Phys. B  2012, Vol. 21 Issue (8): 089401    DOI: 10.1088/1674-1056/21/8/089401
GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS Current Issue| Next Issue| Archive| Adv Search |
Temperature and drain bias dependence of single event transient in 25-nm FinFET technology
Qin Jun-Rui, Chen Shu-Ming, Li Da-Wei, Liang Bin, Liu Bi-Wei
College of Computer, National University of Defense Technology, Changsha 410073, China

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