Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients
He Yi-Bai (何益百)a, Chen Shu-Ming (陈书明)a b
a College of Computer, National University of Defense Technology, Changsha 410073, China; b Science and Technology on Parallel and Distributed Processing Laboratory, National University of Defense Technology, Changsha 410073, China
Abstract The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.
About author: 94.05.Dd; 94.05.Rx; 85.30.Tv; 02.60.Cb
Cite this article:
He Yi-Bai (何益百), Chen Shu-Ming (陈书明) Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients 2014 Chin. Phys. B 23 079401
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