Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

doi:10.1088/1674-1056/21/8/089401

Abstract In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V-1.6 V. Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.

Keywords: fin field-effect transistor single event transient temperature dependence drain bias dependence

Received: 28 November 2011
Revised: 20 December 2011
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014).

Corresponding Authors: Qin Jun-Rui
E-mail: qinjr@nudt.edu.cn

Cite this article:

Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明), Li Da-Wei (李达维), Liang Bin (梁斌), Liu Bi-Wei (刘必慰 ) Temperature and drain bias dependence of single event transient in 25-nm FinFET technology 2012 Chin. Phys. B 21 089401

[1]	Narasimham B, Amusan O A, Bhuva B L, Schrimpf R D and Holman W T 2008 IEEE Trans. Nucl. Sci. 55 3077
[2]	Asenov A, Andrew R B, John H D and Subhash S 1999 IEEE Trans. CAD of Integrated Circuits and Systems 18 1558
[3]	International Technology Roadmap for Semiconductor (ITRS), online available: www.itrs.net/Links/2005ITRS/PIDS2005.pdf
[4]	Wong H S P, Frank D J, Solomon P M, Wann C H J and Welser J J 1999 Proceedings of the IEEE 87 537
[5]	He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H and Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese)
[6]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2009 Acta Phys. Sin. 59 649 (in Chinese)
[7]	Qin J R, Chen S M, Liu B W, Chen J J, Liang B and Liu Z 2011 Sci. Chin.: Tech. Sci. 54 3064
[8]	Chen S M, Liang B, Liu B W and Liu Z 2008 IEEE Trans. Nucl. Sci. 55 2914
[9]	Liu B W, Chen S M, Liang B, Liu Z and Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[10]	Gadlage M J, Ahlbin J R, Ramachandran V, Gouker P, Dinkins C A, Bhuva B L, Narasimham B, Schrimpf R D, McCurdy M W, Alles M L, Reed R A, Mendenhall M H, Massengill L W, Shuler R L and McMorrow D 2009 IEEE Trans. Nucl. Sci. 56 3115
[11]	Casey M C, Bhuva B L, Nation S A, Amusan O A, Loveless T D, Massengill L W, McMorrow D and Melinger J S 2009 Proc. IRPS, Montreal QC, Canada p. 194
[12]	Garg R and Khatri S P 2009 Proc. ICCD, Lake Tahoe, CA, USA p. 498
[13]	Fuketa H, Hashimoto M, Mitsuyama Y and Onoye T 2010 Proc. IRPS, Anaheim, CA, USA p. 213
[14]	Three-dimensional Simulations of Raised Source-Drain FinFET, online available: ftp.synopsys.com/TCAD_-Sentaurus_-Applications_-D-2010.03
[15]	Chang C Y, Lee T L, Wann C, Lai L S, Chen H M, Yeh C C, Chang C S, Ho C C, Sheu J C, Kwok T M, Feng Y A and Yu S M 2009 IEDM Technical Digest, Baltimore, MD, USA p. 293
[16]	Kawasaki H, Basker V S, Yamashita T, Lin C H, Zhu Y, Faltermeier J, Schmitz S, Cummings J, Kanakasabapathy S, Adhikari H, Jagannathan H, Kumar A, Maitra K, Wang J and Yeh C C 2009 IEDM Technical Digest, Baltimore, MD, USA p. 289

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Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

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