Chin. Phys. B
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Chin. Phys. B  2012, Vol. 21 Issue (2): 027101    DOI: 10.1088/1674-1056/21/2/027101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer
Hu Sheng-Donga,Wu Li-Juanb,Zhou Jian-Lina,Gan Pinga,Zhang Bob,Li Zhao-Jib
1. College of Communication Engineering, Chongqing University, Chongqing 400044, China;
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China