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CN 11-5639/O4
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Other articles related with "73.40.Ty":
27101 Li-Juan Wu, Zhong-Jie Zhang, Yue Song, Hang Yang, Li-Min Hu, Na Yuan
  Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET
    Chin. Phys. B   2017 Vol.26 (2): 27101-027101 [Abstract] (169) [HTML 1 KB] [PDF 651 KB] (322)
127304 Yi-Tao He, Ming Qiao, Bo Zhang
  Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer
    Chin. Phys. B   2016 Vol.25 (12): 127304-127304 [Abstract] (194) [HTML 1 KB] [PDF 431 KB] (198)
27305 Yu-Ru Wang, Yi-He Liu, Zhao-Jiang Lin, Dong Fang, Cheng-Zhou Li, Ming Qiao, Bo Zhang
  Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance
    Chin. Phys. B   2016 Vol.25 (2): 27305-027305 [Abstract] (303) [HTML 1 KB] [PDF 379 KB] (314)
27306 Yan-Hui Zhang, Jie Wei, Chao Yin, Qiao Tan, Jian-Ping Liu, Peng-Cheng Li, Xiao-Rong Luo
  A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
    Chin. Phys. B   2016 Vol.25 (2): 27306-027306 [Abstract] (268) [HTML 1 KB] [PDF 857 KB] (812)
47304 Li Peng-Cheng, Luo Xiao-Rong, Luo Yin-Chun, Zhou Kun, Shi Xian-Long, Zhang Yan-Hui, Lv Meng-Shan
  An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer
    Chin. Phys. B   2015 Vol.24 (4): 47304-047304 [Abstract] (303) [HTML 0 KB] [PDF 618 KB] (580)
77306 Luo Yin-Chun, Luo Xiao-Rong, Hu Gang-Yi, Fan Yuan-Hang, Li Peng-Cheng, Wei Jie, Tan Qiao, Zhang Bo
  A low specific on-resistance SOI LDMOS with a novel junction field plate
    Chin. Phys. B   2014 Vol.23 (7): 77306-077306 [Abstract] (384) [HTML 1 KB] [PDF 451 KB] (495)
67101 Hu Sheng-Dong, Wu Xing-He, Zhu Zhi, Jin Jing-Jing, Chen Yin-Hui
  Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer
    Chin. Phys. B   2014 Vol.23 (6): 67101-067101 [Abstract] (145) [HTML 1 KB] [PDF 1752 KB] (543)
77309 Fu Qiang, Zhang Bo, Luo Xiao-Rong, Li Zhao-Ji
  A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate
    Chin. Phys. B   2013 Vol.22 (7): 77309-077309 [Abstract] (202) [HTML 1 KB] [PDF 585 KB] (565)
67306 Zhou Kun, Luo Xiao-Rong, Fan Yuan-Hang, Luo Yin-Chun, Hu Xia-Rong, Zhang Bo
  A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS
    Chin. Phys. B   2013 Vol.22 (6): 67306-067306 [Abstract] (257) [HTML 1 KB] [PDF 938 KB] (682)
27303 Luo Xiao-Rong, Wang Qi, Yao Guo-Liang, Wang Yuan-Gang, Lei Tian-Fei, Wang Pei, Jiang Yong-Heng, Zhou Kun, Zhang Bo
  A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch
    Chin. Phys. B   2013 Vol.22 (2): 27303-027303 [Abstract] (336) [HTML 1 KB] [PDF 809 KB] (746)
27304 Luo Xiao-Rong, Luo Yin-Chun, Fan Ye, Hu Gang-Yi, Wang Xiao-Wei, Zhang Zheng-Yuan, Fan Yuan-Hang, Cai Jin-Yong, Wang Pei, Zhou Kun
  A low specific on-resistance SOI MOSFET with dual gates and recessed drain
    Chin. Phys. B   2013 Vol.22 (2): 27304-027304 [Abstract] (381) [HTML 1 KB] [PDF 684 KB] (643)
27305 Wang Pei, Luo Xiao-Rong, Jiang Yong-Heng, Wang Qi, Zhou Kun, Wu Li-Juan, Wang Xiao-Wei, Cai Jin-Yong, Luo Yin-Chun, Fan Ye, Hu Xia-Rong, Fan Yuan-Hang, Wei Jie, Zhang Bo
  Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench
    Chin. Phys. B   2013 Vol.22 (2): 27305-027305 [Abstract] (342) [HTML 1 KB] [PDF 535 KB] (637)
47303 Zhang Jian,He Jin,Zhou Xing-Ye,Zhang Li-Ning,Ma Yu-Tao,Chen Qin,Zhang Xu-Kai,Yang Zhang,Wang Rui-Fei,HanYu,Chan Mansun
  A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
    Chin. Phys. B   2012 Vol.21 (4): 47303-047303 [Abstract] (1089) [HTML 1 KB] [PDF 303 KB] (640)
37305 Zhuang Xiang,Qiao Ming,Zhang Bo,Li Zhao-Ji
  Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor
    Chin. Phys. B   2012 Vol.21 (3): 37305-037305 [Abstract] (734) [HTML 1 KB] [PDF 1679 KB] (24043)
27101 Hu Sheng-Dong,Wu Li-Juan,Zhou Jian-Lin,Gan Ping,Zhang Bo,Li Zhao-Ji
  Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer
    Chin. Phys. B   2012 Vol.21 (2): 27101-027101 [Abstract] (800) [HTML 1 KB] [PDF 580 KB] (583)
97304 Zhou Xing-Ye, Zhang Jian, Zhou Zhi-Ze, Zhang Li-Ning, Ma Chen-Yue, Wu Wen, Zhao Wei, Zhang Xing
  An improvement to computational efficiency of the drain current model for double-gate MOSFET
    Chin. Phys. B   2011 Vol.20 (9): 97304-097304 [Abstract] (1065) [HTML 0 KB] [PDF 371 KB] (879)
77304 Wang Yuan-Gang, Luo Xiao-Rong, Ge Rui, Wu Li-Juan, Chen Xi, Yao Guo-Liang, Lei Tian-Fei, Wang Qi, Fan Jie, Hu Xia-Rong
  Compound buried layer SOI high voltage device with a step buried oxide
    Chin. Phys. B   2011 Vol.20 (7): 77304-077304 [Abstract] (1036) [HTML 0 KB] [PDF 1859 KB] (791)
16102 He Jin, Liu Feng, Zhou Xing-Ye, Zhang Jian, Zhang Li-Ning
  A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
    Chin. Phys. B   2011 Vol.20 (1): 16102-016102 [Abstract] (1148) [HTML 0 KB] [PDF 589 KB] (1303)
67304 Zhang Jian, He Jin, Zhang Li-Ning
  One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
    Chin. Phys. B   2010 Vol.19 (6): 67304-067304 [Abstract] (1144) [HTML 0 KB] [PDF 367 KB] (612)
77303 Shuyan Zhao, Yuxin Song, Hao Liang, Tingting Jin, Jiajie Lin, Li Yue, Tiangui You, Chang Wang, Xin Ou, Shumin Wang
  Stress and strain analysis of Si-based III-V template fabricated by ion-slicing
    Chin. Phys. B   2020 Vol.29 (7): 77303-077303 [Abstract] () [HTML 0 KB] [PDF 1663 KB] (2)
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