Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer

doi:10.1088/1674-1056/21/2/027101

Abstract A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n⁺-layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm), the E_I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.

Keywords: silicon-on-insulator vertical breakdown voltage separation by implantation oxygen interface charges

Received: 18 August 2011
Revised: 13 September 2011
Accepted manuscript online:

PACS:	71.10.-w	(Theories and models of many-electron systems)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.40.Ty	(Semiconductor-insulator-semiconductor structures)

Fund: Project supported by the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) of China (Grant No. cstcjjA40008).

Corresponding Authors: Hu Sheng-Dong,hushengdong@hotmail.com
E-mail: hushengdong@hotmail.com

Cite this article:

Hu Sheng-Dong(胡盛东), Wu Li-Juan(吴丽娟), Zhou Jian-Lin(周建林), Gan Ping(甘平), Zhang Bo(张波), and Li Zhao-Ji(李肇基) Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n⁺-layer 2012 Chin. Phys. B 21 027101

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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer

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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n⁺-layer