Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

doi:10.1088/1674-1056/20/5/057201

Abstract The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si) TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.

Keywords: grain boundary ZnO thin film transistors trap states simulation

Received: 15 November 2010
Revised: 04 January 2011
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50872112) and NPU Foundation for Fundamental Research, China (Grant No. JC201017).

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Zhang An(张安), Zhao Xiao-Ru(赵小如), Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林) Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position 2011 Chin. Phys. B 20 057201

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Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

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