Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

doi:10.1088/1674-1056/19/5/057802

Abstract The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Keywords: Ga vacancies MOCVD GaN Schottky barrier photodetector

Received: 14 September 2009
Revised: 30 November 2009
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	61.72.J-	(Point defects and defect clusters)

Fund: Project supported by the National Science Fund for Distinguished Young Scholars (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 60836003 and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700) and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z401).

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Zhao De-Gang(赵德刚), Zhang Shuang(张爽), Liu Wen-Bao(刘文宝), Hao Xiao-Peng(郝小鹏), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Yang Hui(杨辉), and Wei Long(魏龙) Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 2010 Chin. Phys. B 19 057802

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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

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