Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (5): 057802    DOI: 10.1088/1674-1056/19/5/057802
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Wei Longa, Hao Xiao-Pengb, Zhao De-Gangc, Zhang Shuangc, Liu Wen-Baoc, Jiang De-Shengc, Zhu Jian-Junc, Liu Zong-Shunc, Wang Huic, Zhang Shu-Mingc, Yang Huic
a Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China; b National Institute of Metrology, Beijing 100013, China; c State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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