A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device

doi:10.1088/1674-1056/19/3/037303

Abstract A new partial-SOI (PSOI) high voltage device structure called a CI PSOI (charge island PSOI) is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n⁺-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n⁺-regions on the interface by the force with ionized donors in the undepleted n⁺-regions, and therefore effectively enhance the electric field of the dielectric buried layer (E_I) and increase the breakdown voltage (BV), thereby alleviating the self-heating effect (SHE) by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and E_I of the CI PSOI LDMOS increase to 631 V and 584 V/μ m from 246 V and 85.8 V/μ m for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.

Keywords: interface charges breakdown voltage partial-SOI self-heating effect

Received: 21 July 2009
Revised: 12 August 2009
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	61.72.S-	(Impurities in crystals)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~60436030 and 60806025).

Cite this article:

Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Luo Xiao-Rong(罗小蓉) A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device 2010 Chin. Phys. B 19 037303

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A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device

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