The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells
Chen Yong-Sheng(陈永生)a)b)†, Wang Jian-Hua(汪建华)c), Lu Jing-Xiao(卢景霄)b), Zheng Wen(郑文)b), Gu Jin-Hua(谷锦华)b), Yang Shi-E(杨仕娥)b), Gao Xiao-Yong(郜小勇)b), Guo Xue-Jun(郭学军)b), Zhao Shang-Li(赵尚丽)b), and Gao Zhe(高哲)b)
aInstitute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; b Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; c Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China
Abstract This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200℃ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88 nm/s is obtained by using a plasma excitation frequency of 75 MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78 nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5% efficiency are fabricated.
Received: 24 December 2007
Revised: 07 January 2008
Accepted manuscript online:
Fund: Program supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140).
Cite this article:
Chen Yong-Sheng(陈永生), Wang Jian-Hua(汪建华), Lu Jing-Xiao(卢景霄), Zheng Wen(郑文), Gu Jin-Hua(谷锦华), Yang Shi-E(杨仕娥), Gao Xiao-Yong(郜小勇), Guo Xue-Jun(郭学军), Zhao Shang-Li(赵尚丽), and Gao Zhe(高哲) The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells 2008 Chin. Phys. B 17 3464
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
