Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(9): 3464-3470    DOI: 10.1088/1674-1056/17/9/054
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

Chen Yong-Sheng(陈永生)a)b), Wang Jian-Hua(汪建华)c), Lu Jing-Xiao(卢景霄)b), Zheng Wen(郑文)b), Gu Jin-Hua(谷锦华)b), Yang Shi-E(杨仕娥)b), Gao Xiao-Yong(郜小勇)b), Guo Xue-Jun(郭学军)b), Zhao Shang-Li(赵尚丽)b), and Gao Zhe(高哲)b)
a Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; b Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China
Abstract  This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200℃ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88 nm/s is obtained by using a plasma excitation frequency of 75 MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78 nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5% efficiency are fabricated.
Keywords:  chemical vapour deposition      plasma deposition      solar cells      crystallinity  
Received:  24 December 2007      Revised:  07 January 2008      Accepted manuscript online: 
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  68.55.-a (Thin film structure and morphology)  
  68.55.A- (Nucleation and growth)  
  71.20.Mq (Elemental semiconductors)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
  84.60.Jt (Photoelectric conversion)  
Fund: Program supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).

Cite this article: 

Chen Yong-Sheng(陈永生), Wang Jian-Hua(汪建华), Lu Jing-Xiao(卢景霄), Zheng Wen(郑文), Gu Jin-Hua(谷锦华), Yang Shi-E(杨仕娥), Gao Xiao-Yong(郜小勇), Guo Xue-Jun(郭学军), Zhao Shang-Li(赵尚丽), and Gao Zhe(高哲) The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells 2008 Chin. Phys. B 17 3464

[1] Surface structure modification of ReSe2 nanosheets via carbon ion irradiation
Mei Qiao(乔梅), Tie-Jun Wang(王铁军), Yong Liu(刘泳), Tao Liu(刘涛), Shan Liu(刘珊), and Shi-Cai Xu(许士才). Chin. Phys. B, 2023, 32(2): 026101.
[2] Optical simulation of CsPbI3/TOPCon tandem solar cells with advanced light management
Min Yue(岳敏), Yan Wang(王燕), Hui-Li Liang(梁会力), and Zeng-Xia Mei (梅增霞). Chin. Phys. B, 2022, 31(8): 088801.
[3] Improving efficiency of inverted perovskite solar cells via ethanolamine-doped PEDOT:PSS as hole transport layer
Zi-Jun Wang(王子君), Jia-Wen Li(李嘉文), Da-Yong Zhang(张大勇), Gen-Jie Yang(杨根杰), and Jun-Sheng Yu(于军胜). Chin. Phys. B, 2022, 31(8): 087802.
[4] Charge transfer modification of inverted planar perovskite solar cells by NiOx/Sr:NiOx bilayer hole transport layer
Qiaopeng Cui(崔翘鹏), Liang Zhao(赵亮), Xuewen Sun(孙学文), Qiannan Yao(姚倩楠), Sheng Huang(黄胜), Lei Zhu(朱磊), Yulong Zhao(赵宇龙), Jian Song(宋健), and Yinghuai Qiang(强颖怀). Chin. Phys. B, 2022, 31(3): 038801.
[5] Effect of net carriers at the interconnection layer in tandem organic solar cells
Li-Jia Chen(陈丽佳), Guo-Xi Niu(牛国玺), Lian-Bin Niu(牛连斌), and Qun-Liang Song(宋群梁). Chin. Phys. B, 2022, 31(3): 038802.
[6] Surface modulation of halide perovskite films for efficient and stable solar cells
Qinxuan Dai(戴沁煊), Chao Luo(骆超), Xianjin Wang(王显进), Feng Gao(高峰), Xiaole Jiang(姜晓乐), and Qing Zhao(赵清). Chin. Phys. B, 2022, 31(3): 037303.
[7] Applications and functions of rare-earth ions in perovskite solar cells
Limin Cang(苍利民), Zongyao Qian(钱宗耀), Jinpei Wang(王金培), Libao Chen(陈利豹), Zhigang Wan(万志刚), Ke Yang(杨柯), Hui Zhang(张辉), and Yonghua Chen(陈永华). Chin. Phys. B, 2022, 31(3): 038402.
[8] Reveal the large open-circuit voltage deficit of all-inorganicCsPbIBr2 perovskite solar cells
Ying Hu(胡颖), Jiaping Wang(王家平), Peng Zhao(赵鹏), Zhenhua Lin(林珍华), Siyu Zhang(张思玉), Jie Su(苏杰), Miao Zhang(张苗), Jincheng Zhang(张进成), Jingjing Chang(常晶晶), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(3): 038804.
[9] Nano Ag-enhanced photoelectric conversion efficiency in all-inorganic, hole-transporting-layer-free CsPbIBr2 perovskite solar cells
Youming Huang(黄友铭), Yizhi Wu(吴以治), Xiaoliang Xu(许小亮), Feifei Qin(秦飞飞), Shihan Zhang(张诗涵), Jiakai An(安嘉凯), Huijie Wang(王会杰), and Ling Liu(刘玲). Chin. Phys. B, 2022, 31(12): 128802.
[10] A silazane additive for CsPbI2Br perovskite solar cells
Ruiqi Cao(曹瑞琪), Yaochang Yue(乐耀昌), Hong Zhang(张弘), Qian Cheng(程倩), Boxin Wang(王博欣), Shilin Li(李世麟), Yuan Zhang(张渊), Shuhong Li(李书宏), and Huiqiong Zhou(周惠琼). Chin. Phys. B, 2022, 31(11): 110101.
[11] Could two-dimensional perovskites fundamentally solve the instability of perovskite photovoltaics
Luoran Chen(陈烙然), Hu Wang(王虎), and Yuchuan Shao(邵宇川). Chin. Phys. B, 2022, 31(11): 117803.
[12] Sputtered SnO2 as an interlayer for efficient semitransparent perovskite solar cells
Zheng Fang(方正), Liu Yang(杨柳), Yongbin Jin(靳永斌), Kaikai Liu(刘凯凯), Huiping Feng(酆辉平), Bingru Deng(邓冰如), Lingfang Zheng(郑玲芳), Changcai Cui(崔长彩), Chengbo Tian(田成波), Liqiang Xie(谢立强), Xipeng Xu(徐西鹏), and Zhanhua Wei(魏展画). Chin. Phys. B, 2022, 31(11): 118801.
[13] Recent advances of interface engineering in inverted perovskite solar cells
Shiqi Yu(余诗琪), Zhuang Xiong(熊壮), Zhenhan Wang(王振涵), Haitao Zhou(周海涛), Fei Ma(马飞), Zihan Qu(瞿子涵), Yang Zhao(赵洋), Xinbo Chu(楚新波), and Jingbi You(游经碧). Chin. Phys. B, 2022, 31(10): 107307.
[14] Device simulation of quasi-two-dimensional perovskite/silicon tandem solar cells towards 30%-efficiency
Xiao-Ping Xie(谢小平), Qian-Yu Bai(白倩玉), Gang Liu(刘刚), Peng Dong(董鹏), Da-Wei Liu(刘大伟), Yu-Feng Ni(倪玉凤), Chen-Bo Liu(刘晨波), He Xi(习鹤), Wei-Dong Zhu(朱卫东), Da-Zheng Chen(陈大正), and Chun-Fu Zhang(张春福). Chin. Phys. B, 2022, 31(10): 108801.
[15] Improved efficiency and stability of perovskite solar cells with molecular ameliorating of ZnO nanorod/perovskite interface and Mg-doping ZnO
Zhenyun Zhang(张振雲), Lei Xu(许磊), and Junjie Qi(齐俊杰). Chin. Phys. B, 2021, 30(3): 038801.
No Suggested Reading articles found!