Please wait a minute...
Chinese Physics, 2007, Vol. 16(11): 3502-3506    DOI: 10.1088/1009-1963/16/11/058
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses

Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华)
Institute of Microelectronics, Peking University, Beijing 100871, China
Abstract  The low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib($\Delta$Ib) are proportional to variations of Nit ($\Delta$Nit). The Nit energy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.   
Keywords:  interface states      substrate current      ultra-thin oxide      constant voltage stress  
Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  73.40.Gk (Tunneling)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  

Cite this article: 

Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华) Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses 2007 Chinese Physics 16 3502

[1] Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states
Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科). Chin. Phys. B, 2022, 31(8): 087804.
[2] Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions
Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超). Chin. Phys. B, 2022, 31(5): 057303.
[3] Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波). Chin. Phys. B, 2021, 30(4): 048504.
[4] Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬). Chin. Phys. B, 2020, 29(6): 067203.
[5] Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells
Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴). Chin. Phys. B, 2017, 26(6): 068802.
[6] Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平). Chin. Phys. B, 2017, 26(10): 107101.
[7] Lattice structures and electronic properties of WZ-CuInS2/WZ-CdS interface from first-principles calculations
Hong-Xia Liu(柳红霞), Fu-Ling Tang(汤富领), Hong-Tao Xue(薛红涛), Yu Zhang(张宇), Yu-Wen Cheng(程育汶), Yu-Dong Feng(冯煜东). Chin. Phys. B, 2016, 25(12): 123101.
[8] Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress
Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明). Chin. Phys. B, 2015, 24(8): 088504.
[9] Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明). Chin. Phys. B, 2015, 24(7): 077307.
[10] Lattice structures and electronic properties of CIGS/CdS interface:First-principles calculations
Tang Fu-Ling (汤富领), Liu Ran (刘冉), Xue Hong-Tao (薛红涛), Lu Wen-Jiang (路文江), Feng Yu-Dong (冯煜东), Rui Zhi-Yuan (芮执元), Huang Min (黄敏). Chin. Phys. B, 2014, 23(7): 077301.
[11] Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements
H. M. Baran, A. Tataroğlu. Chin. Phys. B, 2013, 22(4): 047303.
[12] Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors
Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明). Chin. Phys. B, 2010, 19(9): 097106.
[13] Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)
Pang Fei(庞斐), Liang Xue-Jin(梁学锦), Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏). Chin. Phys. B, 2010, 19(8): 087201.
[14] The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨). Chin. Phys. B, 2009, 18(4): 1614-1617.
[15] Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser
Huang Wei-Qi(黄伟其), Xu Li(许丽), Wang Hai-Xu(王海旭), Jin Feng(金峰), Wu Ke-Yue(吴克跃), Liu Shi-Rong(刘世荣), Qin Cao-Jian(秦朝建), and Qin Shui-Jie(秦水介) . Chin. Phys. B, 2008, 17(5): 1817-1820.
No Suggested Reading articles found!