The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact
Liu Fang(刘芳)a), Wang Tao(王涛)a), Shen Bo(沈波)b), Huang Sen(黄森)b), Lin Fang(林芳)b), Ma Nan(马楠)b), Xu Fu-Jun(许福军)b), Wang Peng(王鹏)a), and Yao Jian-Quan(姚建铨)a)
a College of Precision Instrument and Opto-Electronics Engineering, Institute of Laser and Optoelectronics, Tianjin University, Key Laboratory of Optoelectric Information Science and Technology of Ministry of Education, Tianjin University, Tianjin 300072, China; b State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Abstract This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25--350 °C. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I--V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I--V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.
Received: 15 September 2008
Revised: 29 October 2008
Accepted manuscript online:
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Cite this article:
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact 2009 Chin. Phys. B 18 1614
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