AbstractThe low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ibis formed by electrons tunnelling through interface states, and the variations of Ib($\Delta$Ib) are proportional to variations of Nit ($\Delta$Nit). The Nitenergy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.
(Semiconductor-device characterization, design, and modeling)
Cite this article:
Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华) Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses 2007 Chinese Physics 16 3502
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