Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

doi:10.1088/1674-1056/17/5/044

Abstract

Abstract Stimulated photoluminescence (PL) emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.

Keywords: interface states stimulated emission oxide structure of silicon laser irradiation

Received: 21 September 2007
Revised: 29 January 2008
Accepted manuscript online:

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	61.80.Ba	(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
	78.45.+h	(Stimulated emission)

Fund: Project supported by the National Natural Science Foundation of China (Grant No 10764002).

Cite this article:

Huang Wei-Qi(黄伟其), Xu Li(许丽), Wang Hai-Xu(王海旭), Jin Feng(金峰), Wu Ke-Yue(吴克跃), Liu Shi-Rong(刘世荣), Qin Cao-Jian(秦朝建), and Qin Shui-Jie(秦水介) Stimulated photoluminescence emission and trap states in Si/SiO₂ interface formed by irradiation of laser 2008 Chin. Phys. B 17 1817

[1]	Time-resolved K-shell x-ray spectra of nanosecond laser-produced titanium tracer in gold plasmas Zhencen He(何贞岑), Jiyan Zhang(张继彦), Jiamin Yang(杨家敏), Bing Yan(闫冰), and Zhimin Hu(胡智民). Chin. Phys. B, 2023, 32(1): 015202.
[2]	Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科). Chin. Phys. B, 2022, 31(8): 087804.
[3]	Novel closed-cycle reaction mode for totally green production of Cu_1.8Se nanoparticles based on laser-generated Se colloidal solution Zhangyu Gu(顾张彧), Yisong Fan(范一松), Yixing Ye(叶一星), Yunyu Cai(蔡云雨), Jun Liu(刘俊), Shouliang Wu(吴守良), Pengfei Li(李鹏飞), Junhua Hu(胡俊华), Changhao Liang(梁长浩), and Yao Ma(马垚). Chin. Phys. B, 2022, 31(7): 078102.
[4]	Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超). Chin. Phys. B, 2022, 31(5): 057303.
[5]	Laser-induced phase conversion of n-type SnSe₂ to p-type SnSe Qi Zheng(郑琦), Rong Yang(杨蓉), Kang Wu(吴康), Xiao Lin(林晓), Shixuan Du(杜世萱), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2022, 31(4): 047306.
[6]	Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation Xinxin Li(李欣欣), Zhen Deng(邓震), Sen Wang(王森), Jinbiao Liu(刘金彪), Jun Li(李俊), Yang Jiang(江洋), Ziguang Ma(马紫光), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Chin. Phys. B, 2021, 30(9): 096104.
[7]	Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波). Chin. Phys. B, 2021, 30(4): 048504.
[8]	Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬). Chin. Phys. B, 2020, 29(6): 067203.
[9]	Gastroscopy-conjugated photoacoustic and ultrasonic dual-mode imaging for detection of submucosal gastric cancer: in vitro study Huaqin Wu(吴华钦), Haiyang Song(宋海洋), Yudian Huang(黄玉钿), Zhifang Li(李志芳), Shulian Wu(吴淑莲), Xiaoman Zhang(章小曼), Hui Li(李晖). Chin. Phys. B, 2020, 29(6): 064205.
[10]	Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer Xuee An(安雪娥), Zhengjun Shang(商正君), Chuanhe Ma(马传贺), Xinhe Zheng(郑新和), Cuiling Zhang(张翠玲), Lin Sun(孙琳), Fangyu Yue(越方禹), Bo Li(李波), Ye Chen(陈晔). Chin. Phys. B, 2019, 28(5): 057802.
[11]	Anisotropic stimulated emission cross-section measurement in Nd: YVO₄ Rui Guo(郭瑞), Yijie Shen(申艺杰), Yuan Meng(孟鸢), Mali Gong(巩马理). Chin. Phys. B, 2019, 28(4): 044204.
[12]	Influence of fluorescence time characteristics on the spatial resolution of CW-stimulated emission depletion microscopy Haiyun Qin(秦海芸), Wei Zhao(赵伟), Chen Zhang(张琛), Yong Liu(刘勇), Guiren Wang(王归仁), Kaige Wang(王凯歌). Chin. Phys. B, 2018, 27(3): 037803.
[13]	Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴). Chin. Phys. B, 2017, 26(6): 068802.
[14]	Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平). Chin. Phys. B, 2017, 26(10): 107101.
[15]	STED microscopy based on axially symmetric polarized vortex beams Zhehai Zhou(周哲海), Lianqing Zhu(祝连庆). Chin. Phys. B, 2016, 25(3): 030701.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

Cite this article:

Online attention

Stimulated photoluminescence emission and trap states in Si/SiO₂ interface formed by irradiation of laser