Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD
Liang Song (梁松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Wang Wei (王圩)
National Research Center of Optoelectronic Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
Abstract Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.
Received: 26 October 2005
Revised: 15 February 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60476009).
Cite this article:
Liang Song (梁松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Wang Wei (王圩) Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD 2006 Chinese Physics 15 1114
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