Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

doi:10.1088/1674-1056/24/8/087305

Abstract In this work, a hetero-epitaxial Al_0.49In_0.51As/Ga_0.47In_0.53As metamorphic high electron mobility transistor (mHEMT) grown by metal–organic chemical vapor deposition (MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/AlAs period multiple quantum well (MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the two-dimensional electron gas (2DEG) is larger than 7800 cm²/V·s, with an average sheet carrier density of 4.6×10¹² cm^-2. Two-stage electron beam (EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm mHEMT device on Si substrate. A maximum transconductance G_m of up to 854 mS/mm is achieved, and is comparable to that of mHEMT technology on GaAs substrate with the same dimension. The f_T and f_max are 135 GHz and 120 GHz, respectively.

Keywords: AlInAs/GaInAs silicon metamorphic high electron mobility transistor (mHEMT) metal-organic chemical vapor deposition (MOCVD) multiple quantum well (MQW)

Received: 29 December 2014
Revised: 29 March 2015
Accepted manuscript online:

PACS:

73.61.Ey

(III-V semiconductors)

Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401373), the Fundamental Research Funds for Central University, China (Grant Nos. XDJK2013B004 and 2362014XK13), and the Chongqing Natural Science Foundation, China (Grant No. cstc2014jcyjA40038).

Corresponding Authors: Huang Jie, Li Ming
E-mail: jiehuang@swu.edu.cn;eeliming@sina.com

Cite this article:

Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美) Hetero-epitaxy of L_g=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications 2015 Chin. Phys. B 24 087305

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Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

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Hetero-epitaxy of L_g=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications