Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, China
Abstract Hydrogenated microcrystalline silicon ($\mu$c-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (Hk2+SiHk4). Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).
Received: 25 August 2005
Revised: 23 February 2006
Accepted manuscript online:
Fund: Project supported the Key Project of Tianjin Municipal Science and Technology Commission (Grant No
043186511), the National Natural Science Foundation of China (Grant No 60506003), and the
Chinese-Greece International Project.
Cite this article:
Gao Yan-Tao (高艳涛), Zhang Xiao-Dan (张晓丹), Zhao Ying (赵颖), Sun Jian (孙健), Zhu Feng (朱峰), Wei Chang-Chun (魏长春), Chen Fei (陈飞) Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD 2006 Chinese Physics 15 1110
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