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Chin. Phys. B, 2021, Vol. 30(9): 097101    DOI: 10.1088/1674-1056/ac0e20
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Passivation and dissociation of Pb-type defects at a-SiO2/Si interface

Xue-Hua Liu(刘雪华)1, Wei-Feng Xie(谢伟锋)1, Yang Liu(刘杨)2,3, and Xu Zuo(左旭)1,4,5,†
1 College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China;
2 Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
3 Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China;
4 Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300350, China;
5 Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China
Abstract  It is well known that in the process of thermal oxidation of silicon, there are Pb-type defects at amorphous silicon dioxide/silicon (a-SiO2/Si) interface due to strain. These defects have a very important impact on the performance and reliability of semiconductor devices. In the process of passivation, hydrogen is usually used to inactivate Pb-type defects by the reaction Pb+H2PbH+H. At the same time, PbH centers dissociate according to the chemical reaction PbH→Pb+H. Therefore, it is of great significance to study the balance of the passivation and dissociation. In this work, the reaction mechanisms of passivation and dissociation of the Pb-type defects are investigated by first-principles calculations. The reaction rates of the passivation and dissociation are calculated by the climbing image-nudged elastic band (CI-NEB) method and harmonic transition state theory (HTST). By coupling the rate equations of the passivation and dissociation reactions, the equilibrium density ratio of the saturated interfacial dangling bonds and interfacial defects (Pb, Pb0, and Pb1) at different temperatures is calculated.
Keywords:  first-principles calculation      a-SiO2/Si interface      Pb-type defects      equilibrium density  
Received:  02 June 2021      Revised:  19 June 2021      Accepted manuscript online:  24 June 2021
PACS:  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
  71.20.-b (Electron density of states and band structure of crystalline solids)  
  61.72.Bb (Theories and models of crystal defects)  
  61.80.Az (Theory and models of radiation effects)  
Fund: Project supported by the Science Challenge Project, China (Grant No. TZ2016003-1-105), the Tianjin Natural Science Foundation, China (Grant No. 20JCZDJC00750), and the Fundamental Research Funds for the Central Universities, Nankai University (Grant Nos. 63211107 and 63201182).
Corresponding Authors:  Xu Zuo     E-mail:  xzuo@nankai.edu.cn

Cite this article: 

Xue-Hua Liu(刘雪华), Wei-Feng Xie(谢伟锋), Yang Liu(刘杨), and Xu Zuo(左旭) Passivation and dissociation of Pb-type defects at a-SiO2/Si interface 2021 Chin. Phys. B 30 097101

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