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Chin. Phys. B, 2021, Vol. 30(8): 086107    DOI: 10.1088/1674-1056/abff43
Special Issue: SPECIAL TOPIC — Ion beam modification of materials and applications
SPECIAL TOPIC—Ion beam modification of materials and applications Prev   Next  

Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃ annealing

Zheng Han(韩铮)1, Xu Wang(王旭)1,†, Jiao Wang(王娇)2, Qing Liao(廖庆)3, and Bingsheng Li(李炳生)3,‡
1 Nuclear Power Institute of China, Chengdu 610200, China;
2 Sichuan Vocational and Technical College of Communications, Chengdu 611130, China;
3 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
Abstract  A nano-twinned microstructure was found in amorphous SiC after high-temperature annealing. Grazing incidence x-ray diffraction, high-resolution transmission electron microscopy, and electron diffraction were performed to characterize the microstructure and phase transition in the recrystallization layer. After 1500 ℃ or 2-h annealing, 3C-SiC grains and numerous stacking faults on the {111} planes were visible. Some 3C-SiC grains have nano-twinned structure with {011} planes. Between the nano-twinned 3C-SiC grains, there is a stacking fault, indicating that the formation mechanisms of the nano-twinned structure are related to the disorder of Si atoms. The increase in the twin thickness with increasing annealing temperature demonstrates that the nano-twinned structure can sink for lattice defects, in order to improve the radiation tolerance of SiC.
Keywords:  6H-SiC      ion implantation      microstructure      transmission electron microscopy      recrystallization  
Received:  07 March 2021      Revised:  21 April 2021      Accepted manuscript online:  10 May 2021
PACS:  61.80.Jh (Ion radiation effects)  
  61.82.Fk (Semiconductors)  
  68.37.Lp (Transmission electron microscopy (TEM))  
  81.10.Jt (Growth from solid phases (including multiphase diffusion and recrystallization))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12075194) and Sichuan Science and Technology Program (Grant No. 2020ZYD055).
Corresponding Authors:  Xu Wang, Bingsheng Li     E-mail:  wcici2018@126.com;libingshengmvp@163.com

Cite this article: 

Zheng Han(韩铮), Xu Wang(王旭), Jiao Wang(王娇), Qing Liao(廖庆), and Bingsheng Li(李炳生) Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃ annealing 2021 Chin. Phys. B 30 086107

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