High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

doi:10.1088/1674-1056/28/3/038504

Abstract

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under -60 mV, respectively. The optical performance for each channel was achieved using a 2μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached 5.0×10¹¹ cm·Hz^1/2/W at 6.8 μm and 3.1×10¹¹ cm·Hz^1/2/W at 9.1 μm, respectively, at 77 K.

Keywords: infrared detector InAs/GaSb superlattice dual-color molecular beam epitaxy

Received: 14 December 2018
Revised: 14 January 2019
Published: 05 March 2019

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	68.65.Cd	(Superlattices)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)

Fund:

Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).

Corresponding Authors: Guo-Wei Wang, Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn;wangguowei@semi.ac.cn

Cite this article:

Zhi Jiang(蒋志), Yao-Yao Sun(孙姚耀), Chun-Yan Guo(郭春妍), Yue-Xi Lv(吕粤希), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector 2019 Chin. Phys. B 28 038504

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