INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector |
Zhi Jiang(蒋志)1,2, Yao-Yao Sun(孙姚耀)1,2, Chun-Yan Guo(郭春妍)1,2, Yue-Xi Lv(吕粤希)1,2, Hong-Yue Hao(郝宏玥)1,2, Dong-Wei Jiang(蒋洞微)1,2, Guo-Wei Wang(王国伟)1,2, Ying-Qiang Xu(徐应强)1,2, Zhi-Chuan Niu(牛智川)1,2 |
1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
|
|
Abstract A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under -60 mV, respectively. The optical performance for each channel was achieved using a 2μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached 5.0×1011 cm·Hz1/2/W at 6.8 μm and 3.1×1011 cm·Hz1/2/W at 9.1 μm, respectively, at 77 K.
|
Received: 14 December 2018
Revised: 14 January 2019
Published: 05 March 2019
|
PACS:
|
85.60.Gz
|
(Photodetectors (including infrared and CCD detectors))
|
|
68.65.Cd
|
(Superlattices)
|
|
72.20.Jv
|
(Charge carriers: generation, recombination, lifetime, and trapping)
|
|
Fund: Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403). |
Corresponding Authors:
Guo-Wei Wang, Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn;wangguowei@semi.ac.cn
|
Cite this article:
Zhi Jiang(蒋志), Yao-Yao Sun(孙姚耀), Chun-Yan Guo(郭春妍), Yue-Xi Lv(吕粤希), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector 2019 Chin. Phys. B 28 038504
|
[1] |
Sai-Halasz G A, Tsu R and Esaki L 1977 Appl. Phys. Lett. 30 651
|
[2] |
Nguyen B M, Hoffman D, Wei Y J, Delaunay P Y, Hood A and Razeghi M 2007 Appl. Phys. Lett. 90 231108
|
[3] |
Nguyen B M, Hoffman D, Delaunay P Y and Razeghi M 2007 Appl. Phys. Lett. 91 163511
|
[4] |
Huang E K, Pour S A, Hoang M A, Haddadi A, Razeghi M and Tidrow M Z 2012 Opt. Lett. 37 2025
|
[5] |
Ting D Z, Hill C J, Soibel A, Keo S A, Mumolo J M, Nguyen J and Gunapala S D 2009 Appl. Phys. Lett. 95 023508
|
[6] |
Rodriguez J B, Plis E, Bishop G, Sharma Y D, Kim H, Dawson L R and Krishna S 2007 Appl. Phys. Lett. 91 043514
|
[7] |
Han X, Xiang W, Hao H Y, Jiang D W, Yao Y, Wang G W, Xu Y Q and Niu Z C 2017 Chin. Phys. B 26 018505
|
[8] |
Jiang Z, Han X, Sun Y Y, Guo C Y, Lv Y X, Hao H Y, Jiang D W, Wang G W, Xu Y Q and Niu Z C 2017 Infrared Phys. Technol. 86 159
|
[9] |
Jiang D W, Xiang W, Guo F Y, Hao H Y, Han X, Li X C, Wang G W, Xu Y Q, Yu Q J and Niu Z C 2016 Chin. Phys. Lett. 33 048502
|
[10] |
Sun Y Y, Lv Y X, Han X, Guo C Y, Jiang Z, Hao H Y, Jiang D W, Wang G W, Xu Y Q and Niu Z C 2017 Chin. Phys. B 26 098506
|
[11] |
Huang E K and Razeghi M 2012 SPIE Proceedings - The International Society for Optical Engineering, 21-26 January 2012, San Francisco, United States, 82680Z
|
[12] |
Plis E, Myers S A, Ramirez D A and Krishna S 2016 SPIE Defense + Security, 17-21 April 2016, Baltimore, United States, 981911
|
[13] |
Rodriguez J B, Christol P, Cerutti L, Chevrier F and Joullié A 2005 J. Cryst. Growth 274 6
|
[14] |
Ariyawansa G, Grupen M, Duran J M, Scheihing J E, Nelson T R and Eismann M T 2012 J. Appl. Phys. 111 073107
|
[15] |
Razeghi M, Haddadi A, Dehzangi A, Chevallier R and Yang T 2017 SPIE Defense + Security, 9-13 April 2017, Anaheim, United States, 1017705
|
[16] |
Martyniuk P, Wrobel J, Plis E, Madejczyk P, Kowalewski A, Gawron W, Krishna S and Rogalski A 2012 Semicond. Sci. Technol. 27 055002
|
[17] |
Rogalski A, Martyniuk P and Kopytko M 2017 Appl. Phys. Rev. 4 031304
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|