High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

doi:10.1088/1674-1056/28/3/038504

Abstract

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under -60 mV, respectively. The optical performance for each channel was achieved using a 2μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached 5.0×10¹¹ cm·Hz^1/2/W at 6.8 μm and 3.1×10¹¹ cm·Hz^1/2/W at 9.1 μm, respectively, at 77 K.

Keywords: infrared detector InAs/GaSb superlattice dual-color molecular beam epitaxy

Received: 14 December 2018
Revised: 14 January 2019
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	68.65.Cd	(Superlattices)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)

Fund:

Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).

Corresponding Authors: Guo-Wei Wang, Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn;wangguowei@semi.ac.cn

Cite this article:

Zhi Jiang(蒋志), Yao-Yao Sun(孙姚耀), Chun-Yan Guo(郭春妍), Yue-Xi Lv(吕粤希), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector 2019 Chin. Phys. B 28 038504

[1]	Sai-Halasz G A, Tsu R and Esaki L 1977 Appl. Phys. Lett. 30 651
[2]	Nguyen B M, Hoffman D, Wei Y J, Delaunay P Y, Hood A and Razeghi M 2007 Appl. Phys. Lett. 90 231108
[3]	Nguyen B M, Hoffman D, Delaunay P Y and Razeghi M 2007 Appl. Phys. Lett. 91 163511
[4]	Huang E K, Pour S A, Hoang M A, Haddadi A, Razeghi M and Tidrow M Z 2012 Opt. Lett. 37 2025
[5]	Ting D Z, Hill C J, Soibel A, Keo S A, Mumolo J M, Nguyen J and Gunapala S D 2009 Appl. Phys. Lett. 95 023508
[6]	Rodriguez J B, Plis E, Bishop G, Sharma Y D, Kim H, Dawson L R and Krishna S 2007 Appl. Phys. Lett. 91 043514
[7]	Han X, Xiang W, Hao H Y, Jiang D W, Yao Y, Wang G W, Xu Y Q and Niu Z C 2017 Chin. Phys. B 26 018505
[8]	Jiang Z, Han X, Sun Y Y, Guo C Y, Lv Y X, Hao H Y, Jiang D W, Wang G W, Xu Y Q and Niu Z C 2017 Infrared Phys. Technol. 86 159
[9]	Jiang D W, Xiang W, Guo F Y, Hao H Y, Han X, Li X C, Wang G W, Xu Y Q, Yu Q J and Niu Z C 2016 Chin. Phys. Lett. 33 048502
[10]	Sun Y Y, Lv Y X, Han X, Guo C Y, Jiang Z, Hao H Y, Jiang D W, Wang G W, Xu Y Q and Niu Z C 2017 Chin. Phys. B 26 098506
[11]	Huang E K and Razeghi M 2012 SPIE Proceedings - The International Society for Optical Engineering, 21-26 January 2012, San Francisco, United States, 82680Z
[12]	Plis E, Myers S A, Ramirez D A and Krishna S 2016 SPIE Defense + Security, 17-21 April 2016, Baltimore, United States, 981911
[13]	Rodriguez J B, Christol P, Cerutti L, Chevrier F and Joullié A 2005 J. Cryst. Growth 274 6
[14]	Ariyawansa G, Grupen M, Duran J M, Scheihing J E, Nelson T R and Eismann M T 2012 J. Appl. Phys. 111 073107
[15]	Razeghi M, Haddadi A, Dehzangi A, Chevallier R and Yang T 2017 SPIE Defense + Security, 9-13 April 2017, Anaheim, United States, 1017705
[16]	Martyniuk P, Wrobel J, Plis E, Madejczyk P, Kowalewski A, Gawron W, Krishna S and Rogalski A 2012 Semicond. Sci. Technol. 27 055002
[17]	Rogalski A, Martyniuk P and Kopytko M 2017 Appl. Phys. Rev. 4 031304

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High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

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