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Chin. Phys. B, 2019, Vol. 28(3): 034202    DOI: 10.1088/1674-1056/28/3/034202
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

Jin-Ming Shang(尚金铭)1,2, Jian Feng(冯健)2,3, Cheng-Ao Yang(杨成奥)1,2, Sheng-Wen Xie(谢圣文)1,2, Yi Zhang(张一)1,2, Cun-Zhu Tong(佟存柱)2,3, Yu Zhang(张宇)1,2, Zhi-Chuan Niu(牛智川)1,2
1 State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, china;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Abstract  

The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure, grown on Te-doped (001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector (DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μ wavelength operating near room temperature was achieved using a 3% output coupler.

Keywords:  semiconductor disk laser      GaSb      molecular beam epitaxy     
Received:  03 December 2018      Published:  05 March 2019
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  42.60.Pk (Continuous operation)  
  78.55.Cr (III-V semiconductors)  
  78.67.De (Quantum wells)  
Fund: 

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790581, 61790582, and 61790584), the National Natural Science Foundation of China (Grant No. 61435012), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

Corresponding Authors:  Yu Zhang, Zhi-Chuan Niu     E-mail:  zhangyu@semi.ac.cn;zcniu@semi.ac.cn

Cite this article: 

Jin-Ming Shang(尚金铭), Jian Feng(冯健), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Yi Zhang(张一), Cun-Zhu Tong(佟存柱), Yu Zhang(张宇), Zhi-Chuan Niu(牛智川) High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 2019 Chin. Phys. B 28 034202

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