Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

doi:10.1088/1674-1056/27/8/087504

Abstract In this paper, Ta/[NiFe(15 nm)/FeMn(10 nm)]/Ta exchange-biased bilayers are fabricated by magnetron sputtering, and their static and dynamic magnetic properties before and after rapid annealing treatment with pulsed current are characterized by using a vibrating sample magnetometer (VSM) and a vector network analyzer (VNA), respectively. The exchange bias field H_e and static anisotropy field H_k^sta decrease from 118.45 Oe (1 Oe=79.5775 A·m^-1) and 126.84 Oe at 0 V to 94.75 Oe and 102.31 Oe at 90 V, respectively, with increasing capacitor voltage, which supplies pulsed current to heat the sample. The effect of flash thermal annealing by pulsed current on the rotational anisotropy (H_rot), the difference value between static and dynamic magnetic anisotropy, is investigated particularly. The highest H_rot is obtained in the sample annealing with 45-V capacitor (3300 μF) voltage. According to the anisotropic magnetoresistance measurements, it can be explained by the fact that the temperature of the sample is around the blocking temperature of the exchange bias system (T_b) at 45 V, the critical temperature where the formation of more unstable antiferromagnetic grains occurs.

Keywords: rapid annealing sputtering pulsed current rotational anisotropy

Received: 15 December 2017
Revised: 12 April 2018
Accepted manuscript online:

PACS:	75.70.Ak	(Magnetic properties of monolayers and thin films)
	91.25.St	(Magnetic fabrics and anisotropy)

Fund: Project supported by the Young Science and Technology Innovation Team of Sichuan Province, China (Grant No. 2017TD0020).

Corresponding Authors: Zhen Wang
E-mail: wangzhen@swust.edu.cn

Cite this article:

Zhen Wang(王振), Shi-Jie Tan(谭士杰), Jun Li(李俊), Bo Dai(代波), Yan-Ke Zou(邹延珂) Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film 2018 Chin. Phys. B 27 087504

[1]	Yu H M, Kelly O A, Cros V, Bernard R, Bortolotti P, Anane A, Brandl F, Huber R, Stasinopoulos I and Grundlerb D 2015 Sci. Rep. 4 6848
[2]	Wei Z, Sharma A, Nunez A S, Haney P M, Duine R A, Bass J, MacDonald A H and Tsoi M 2007 Phys. Rev. Lett. 98 116603
[3]	Phuoca N N, Lim S L, Xu F, Ma Y G and Ong C K 2008 J. Appl. Phys. 104 093708
[4]	Wang Y B, Dai B, Huang B, Ren Y, Xu J, Wang Z, Tan S and Ni J 2016 J. Mater. Sci.: Mater. Electron. 27 3778
[5]	Chai G Z, Phuoc N and Ong C K 2012 Sci. Rep. 2 832
[6]	Stiles M D and McMichael R D 1999 Phys. Rev. B 59 3722
[7]	McCord J, Mattheis R and Elefant D 2004 Phys. Rev. B 70 094420
[8]	McCord J, Kaltofen R, Gemming T, Hühne R and Schultz L 2007 Phys. Rev. B 75 134418
[9]	Miller B H and Dahlberg E D 1996 Appl. Phys. Lett. 69 3932
[10]	Wei J W, Wang J B, Liu Q F, Li X Y, Cao D R and Sun X J 2014 Rev. Sci. Instrum. 85 054705
[11]	Yang D and Conrade H 2001 Intermetallics 9 943
[12]	Hertel S, Kisslinger F, Jobst J, Waldmann D, Krieger M and Webera H B 2011 Appl. Phys. Lett. 98 212109
[13]	Conrad H, Karam N and Mannan S 1984 Scr. Metall. 18 275
[14]	Qi Z J, Daniels C, Hong S J, Park Y W, Meunier V, Drndić M and Johnson A T 2015 ACS Nano 9 3510
[15]	Zaluski L, Zaluska A, Kopcewicz M and Schulz R 1991 J. Mater. Res. 5 1028
[16]	Phuoc N N, Xu F and Ong C K 2009 Appl. Phys. Lett. 94 092505
[17]	LamyY and Viala B 2006 IEEE Trans. Magn. 42 3332
[18]	Phuoc N N, Hung L T and Ong C K 2010 J. Alloys Compd. 506 504
[19]	Landau L and Lifshitz E 1935 Phys. Z. Sowjetunion 8 153
[20]	Gilbert T L 2004 IEEE Trans. Magn. 40 3443
[21]	Laukhin V, Skumryev V, MartíX, Hrabovsky D, Sánchez F, García-Cuenca M V, Ferrater C, Varela M, Lüders U, Bobo J F and Fontcuberta J 2006 Phys. Rev. Lett. 97 227201
[22]	Liu K, Baker S M, Tuominen M, Russell T P and Schuller I K 2001 Phys. Rev. B 63 060403
[23]	Zheng D X, Gong J L, Jin C, Li P and Bai H L 2015 Mater. Lett. 156 125
[24]	Holanda J, Maior D S, Azevedo A and Rezende S M 2017 J. Magn. Magn. Mater. 432 507
[25]	Menéndez E, Modarresi H, Dias1T, Geshev J, Pereira L M C, Temst K and Vantomme A 2014 J. Appl. Phys. 115 133915
[26]	Chen A T, Zhao Y G, Li P S, Zhang X, Peng R C, Huang H L, Zou L K, Zheng X L, Zhang S, Miao P X, Lu Y L, Cai J W and Nan C W 2016 Adv. Mater. 28 363

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Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

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