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Chin. Phys. B, 2017, Vol. 26(9): 096103    DOI: 10.1088/1674-1056/26/9/096103
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

Qiwen Zheng(郑齐文)1,2, Jiangwei Cui(崔江维)1,2, Mengxin Liu(刘梦新)4, Dandan Su(苏丹丹)1,2,3, Hang Zhou(周航)1,2,3, Teng Ma(马腾)1,2,3, Xuefeng Yu(余学峰)1,2, Wu Lu(陆妩)1,2, Qi Guo(郭旗)1,2, Fazhan Zhao(赵发展)4
1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China;
4 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100049, China
Abstract  In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (Vdd) reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention Vdd should be tested, because Vdd of SRAM cell under data retention mode is lower than normal Vdd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.
Keywords:  silicon-on-insulator      total ionizing dose      static random access memory      static noise margin  
Received:  28 April 2017      Revised:  12 June 2017      Published:  05 September 2017
PACS:  61.80.Ed (γ-ray effects)  
  61.82.Fk (Semiconductors)  
  85.30.Tv (Field effect devices)  
  07.85.-m (X- and γ-ray instruments)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 11605282) and the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences Research Projects (Grant No. KLSDTJJ2016-07).
Corresponding Authors:  Fazhan Zhao     E-mail:  qiwinzheng@163.com,qwzheng@ms.xjb.ac.cn

Cite this article: 

Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展) Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 2017 Chin. Phys. B 26 096103

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