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Chin. Phys. B, 2017, Vol. 26(2): 027801    DOI: 10.1088/1674-1056/26/2/027801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition

Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  High indium semipolar (1122) and polar (0001) InGaN layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface (1122) is larger than that of the surface (0001), which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the (0001) surface with island-like morphology shows inhomogeneous indium incorporation, while the (1122) surface with a spiral-like morphology shows a better homogeneous In composition. This feature is also demonstrated by the monochromatic cathodoluminescence map.
Keywords:  semipolar      GaN      MOCVD     
Received:  29 September 2016      Published:  05 February 2017
PACS:  78.55.Cr (III-V semiconductors)  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204006 and 61574108) and the Fundamental Research Funds for the Central Universities, China (Grant No. 7214570101).
Corresponding Authors:  Sheng-Rui Xu, Jin-Cheng Zhang     E-mail:  shengruixidian@126.com;jchzhang@xidian.edu.cn

Cite this article: 

Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition 2017 Chin. Phys. B 26 027801

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