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Chin. Phys. B, 2017, Vol. 26(2): 028101    DOI: 10.1088/1674-1056/26/2/028101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates

Yu-Bing Wang(王玉冰), Wei-Hong Yin(尹伟红), Qin Han(韩勤), Xiao-Hong Yang(杨晓红), Han Ye(叶焓), Qian-Qian Lv(吕倩倩), Dong-Dong Yin(尹冬冬)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Recently, graphene-based photodetectors have been rapidly developed. However, their photoresponsivities are generally low due to the weak optical absorption strength of graphene. In this paper, we fabricate photoconductive multi-layer graphene (MLG) photodetectors on etched silicon-on-insulator substrates. A photoresponsivity exceeding 200 A·W-1 is obtained, which enables most optoelectronic application. In addition, according to the analyses of the high photoresponsivity and long photoresponse time, we conclude that the working mechanism of the device is photoconductive effect. The process of photons conversion into conducting electrons is also described in detail. Finally, according to the distinct difference between the photoresponses at 1550 nm and 808 nm, we estimate that the position of the trapping energy is somewhere between 0.4 eV and 0.76 eV, higher than the Fermi energy of MLG. Our work paves a new way for fabricating the graphene photoconductive photodetectors.
Keywords:  graphene photodetector      photoconductive effect  
Received:  08 September 2016      Revised:  20 October 2016      Accepted manuscript online: 
PACS:  81.05.ue (Graphene)  
  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402404), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).
Corresponding Authors:  Qin Han     E-mail:  hanqin@semi.ac.cn

Cite this article: 

Yu-Bing Wang(王玉冰), Wei-Hong Yin(尹伟红), Qin Han(韩勤), Xiao-Hong Yang(杨晓红), Han Ye(叶焓), Qian-Qian Lv(吕倩倩), Dong-Dong Yin(尹冬冬) Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates 2017 Chin. Phys. B 26 028101

[1] Wang X, Shi Y and Zhang R 2013 Chin. Phys. B 22 098505
[2] Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P and Stormer H L 2008 Solid State Commun. 146 351
[3] Gan S, Cheng C, Zhan Y, Huang B, Gan X, Li S, Lin S, Li X, Zhao J, Chen H and Bao Q 2015 Nanoscale 7 20249
[4] Hong X, Posadas A, Zou K, Ahn C H and Zhu J 2009 Phys. Rev. Lett. 102 136808
[5] Mak K F, Sfeir M Y, Wu Y, Lui C H, Misewich J A and Heinz T F 2008 Phys. Rev. Lett. 101 196405
[6] Yin W, Han Q and Yang X 2012 Acta Phys. Sin. 61 248502 (in Chinese)
[7] Wang Y, Yin W, Han Q, Yang X, Ye H, Lv Q and Yin D 2016 Chin. Phys. B 25 118103
[8] Wu H, Linghu C, Lv H and Qian H 2013 Chin. Phys. B 22 098106
[9] Mueller T, Xia F and Avouris P 2010 Nat. Photon. 4 297
[10] Kang C G, Lee S K, Yoo T J, Park W, Jung U, Ahn J and Lee B H 2014 Appl. Phys. Lett. 104 161902
[11] Park J, Ahn Y H and Ruiz-Vargas C 2009 Nano Lett. 9 1742
[12] Xia F, Mueller T, Golizadeh-Mojarad R, Freitag M, Lin Y, Tsang J, Perebeinos V and Avouris P 2009 Nano Lett. 9 1039
[13] Liu T and Huang Z 2011 Chin. Phys. Lett. 28 107301
[14] Engel M, Steiner M, Lombardo A, Ferrari A C, Lohneysen H, Avouris P and Krupke R 2012 Nat. Commun. 3 906
[15] Furchi M, Urich A, Pospischil A, Lilley G, Unterrainer K, Detz H, Klang P, Andrews A M, Schrenk W, Strasser G and Mueller T 2012 Nano Lett. 12 2773
[16] Konstantatos G, Badioli M, Gaudreau L, Osmond J, Bernechea M, de Arquer F P G, Gatti F and Koppens F H L 2012 Nat. Nanotechnol. 7 363
[17] Zhang D, Gan L, Cao Y, Wang Q, Qi L and Guo X 2012 Adv. Mater. 24 2715
[18] Zhang Y, Liu T, Meng B, Li X, Liang G, Hu X, and Wang Q J 2013 Nat. Commun. 4 1881
[19] Casiraghi C, Pisana S, Novoselov K S, Geim A K and Ferrari A C 2007 Appl. Phys. Lett. 91 233108
[20] Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K S, Roth S and Geim A K 2006 Phys. Rev. Lett. 97 187401
[21] Li X, Xie D, Park H, Zhu M, Zeng T H, Wang K, Wei J, Wu D, Kong J and Zhu H 2013 Nanoscale 5 1945
[22] Liu M, Yin X, Ulin-Avila E, Geng B, Zentgraf T, Ju L, Wang F and Zhang X 2011 Nature 474 64
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Yubing Wang(王玉冰), Weihong Yin(尹伟红), Qin Han(韩勤), Xiaohong Yang(杨晓红), Han Ye(叶焓), Qianqian Lv(吕倩倩), Dongdong Yin(尹冬冬). Chin. Phys. B, 2016, 25(11): 118103.
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