| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Enhancement of subgap conductance in a graphene superconductor junction by valley polarization |
| Chuan-Xin Li(李传新)1, Sa-Ke Wang(汪萨克)2, Jun Wang(汪军)2 |
1 College of Mathematics and Physics, Jingchu University of Technology, Jingmen 448000, China;
2 Department of Physics, Southeast University, Nanjing 210096, China |
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Abstract We theoretically study the differential conductance of a graphene/graphene superconductor junction, where the valley polarization of Dirac electrons is considered in the nonsuperconducting region. It is shown that the subgap conductance will increase monotonically with the valley-polarization strength when the chemical potential μ is near the Dirac point μ≤3Δ (Δ is the superconducting gap), whereas it will decrease monotonically when μ is far away from the Dirac point, μ≥5Δ. The former case is induced by the specular Andreev reflection while the retro-reflection accounts for the later result. Our findings may shed light on the control of conductance of a graphene superconductor junction by valley polarization.
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Received: 28 April 2016
Revised: 31 October 2016
Published: 05 February 2017
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PACS:
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73.40.Gk
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(Tunneling)
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73.23.Ad
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(Ballistic transport)
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85.25.-j
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(Superconducting devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11274059 and 11074233). |
Corresponding Authors:
Jun Wang
E-mail: jwang@seu.edu.cn
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Cite this article:
Chuan-Xin Li(李传新), Sa-Ke Wang(汪萨克), Jun Wang(汪军) Enhancement of subgap conductance in a graphene superconductor junction by valley polarization 2017 Chin. Phys. B 26 027304
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