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Chin. Phys. B, 2016, Vol. 25(7): 077503    DOI: 10.1088/1674-1056/25/7/077503
SPECIAL TOPIC—High pressure physics Prev   Next  

Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

Bi-Juan Chen(陈碧娟)1, Zheng Deng(邓正)1, Xian-Cheng Wang(望贤成)1, Shao-Min Feng(冯少敏)1, Zhen Yuan(袁真)1, Si-Jia Zhang(张思佳)1, Qing-Qing Liu(刘清青)1, Chang-Qing Jin(靳常青)1,2
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China
Abstract  

The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor.

Keywords:  diluted magnetic semiconductor      ZrCuSiAs-type structure      high pressure  
Received:  17 March 2016      Revised:  07 April 2016      Published:  05 July 2016
PACS:  75.50.Pp (Magnetic semiconductors)  
  81.40.Vw (Pressure treatment)  
  74.62.Fj (Effects of pressure)  
  78.40.Fy (Semiconductors)  
Fund: 

Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China.

Corresponding Authors:  Xian-Cheng Wang, Chang-Qing Jin     E-mail:  Jin@iphy.ac.cn

Cite this article: 

Bi-Juan Chen(陈碧娟), Zheng Deng(邓正), Xian-Cheng Wang(望贤成), Shao-Min Feng(冯少敏), Zhen Yuan(袁真), Si-Jia Zhang(张思佳), Qing-Qing Liu(刘清青), Chang-Qing Jin(靳常青) Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors 2016 Chin. Phys. B 25 077503

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