Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD

doi:10.1088/1674-1056/25/11/118801

Abstract The epitaxial-Si (epi-Si) growth on the crystalline Si (c-Si) wafer could be tailored by the working pressure in plasma-enhanced chemical vapor deposition (PECVD). It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon (a-Si:H)/c-Si interface is suppressed at high pressure (hp) and occurs at low pressure (lp). The hp a-Si:H, as a purely amorphous layer, is incorporated in the lp-epi-Si/c-Si interface. We find that:(i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough; (ii) with the increase of the inserted hp layer thickness, lp epi-Si at the interface is suppressed, and the fraction of a-Si:H in the thin films increases and that of c-Si decreases, corresponding to the increasing minority carrier lifetime of the sample. Not only the epitaxial results, but also the quality of the thin films at hp also surpasses that at lp, leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase.

Keywords: hydrogenated amorphous silicon(a-Si:H) epitaxial growth interface plasma-enhanced chemical vapor deposition(PECVD)

Received: 30 May 2016
Revised: 17 July 2016
Accepted manuscript online:

PACS:	88.40.H-	(Solar cells (photovoltaics))
	78.55.Qr	(Amorphous materials; glasses and other disordered solids)
	77.55.Px	(Epitaxial and superlattice films)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. E2015201203) and the International Society for Theoretical Chemical Physics of China (Grant No. 2015DFE62900).

Corresponding Authors: Jianhui Chen, Yaohua Mai
E-mail: chenjianhui@hbu.edu.cn;yaohuamai@hbu.edu.cn

Cite this article:

Yanjiao Shen(沈艳娇), Jianhui Chen(陈剑辉), Jing Yang(杨静), Bingbing Chen(陈兵兵), Jingwei Chen(陈静伟), Feng Li(李峰), Xiuhong Dai(代秀红), Haixu Liu(刘海旭), Ying Xu(许颖), Yaohua Mai(麦耀华) Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD 2016 Chin. Phys. B 25 118801

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Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD

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