Please wait a minute...
Chin. Phys. B, 2015, Vol. 24(6): 067804    DOI: 10.1088/1674-1056/24/6/067804
Special Issue: TOPICAL REVIEW — III-nitride optoelectronic materials and devices
TOPICAL REVIEW—III-nitride optoelectronic materials and devices Prev   Next  

Status of GaN-based green light-emitting diodes

Liu Jun-Lin (刘军林), Zhang Jian-Li (张建立), Wang Guang-Xu (王光绪), Mo Chun-Lan (莫春兰), Xu Long-Quan (徐龙权), Ding Jie (丁杰), Quan Zhi-Jue (全知觉), Wang Xiao-Lan (王小兰), Pan Shuan (潘拴), Zheng Chang-Da (郑畅达), Wu Xiao-Ming (吴小明), Fang Wen-Qing (方文卿), Jiang Feng-Yi (江风益)
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China
Abstract  

GaN-based blue light emitting diodes (LEDs) have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency (EQE) of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantum well (QW) with low strain. Many techniques of improving efficiency are discussed, such as inserting AlGaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported: high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.

Keywords:  silicon substrate      GaN      green LED  
Received:  20 January 2015      Revised:  05 February 2015      Accepted manuscript online: 
PACS:  78.66.Fd (III-V semiconductors)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: 

Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334001), the National Natural Science Foundation of China (Grant Nos. 11364034 and 21405076), the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAE32B01), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Corresponding Authors:  Zhang Jian-Li     E-mail:  Zhangjianli@ncu.edu.cn
About author:  78.66.Fd; 73.40.Kp

Cite this article: 

Liu Jun-Lin (刘军林), Zhang Jian-Li (张建立), Wang Guang-Xu (王光绪), Mo Chun-Lan (莫春兰), Xu Long-Quan (徐龙权), Ding Jie (丁杰), Quan Zhi-Jue (全知觉), Wang Xiao-Lan (王小兰), Pan Shuan (潘拴), Zheng Chang-Da (郑畅达), Wu Xiao-Ming (吴小明), Fang Wen-Qing (方文卿), Jiang Feng-Yi (江风益) Status of GaN-based green light-emitting diodes 2015 Chin. Phys. B 24 067804

[1] Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
[2] Narukawa Y, Ichikawa M, Sanga D, Sano M and Mukai K 2010 J. Phys. D: Appl. Phys. 43 354002
[3] Saito S, Hashimoto R, Hwang J I and Nunoue S 2013 Appl. Phys. Express 6 111004
[4] Logan R A, White H G and Wiegmann W 1968 Appl. Phys. Lett. 13 139
[5] Kuo C P, Fletcher R M, Osentowski T D, Lardizabal M C, Craford M G and Robbins V M 1990 Appl. Phys. Lett. 57 2937
[6] Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl. Phys. Lett. 48 353
[7] Amano H, Kito M, Hiramatsu K and Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[8] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[9] Nakamura S, Mukai T, Senoh M and Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[10] Nakamura S, Mukai T and Senoh M 1994 J. Appl. Phys. 76 8189
[11] Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T and Mukai T 1995 Jpn. J. Appl. Phys. 34 L1332
[12] Nakamura S, Senoh M, Iwasa N and Nagahama S 1995 Jpn. J. Appl. Phys. 34 L797
[13] Schubert E Fred 2006 Light-Emitting Diodes (Cambrideg: Cambridge University Press) p. 86
[14] Wang G B, Xiong H, Lin Y X, Fang Z L, Kang J Y, Duan Y and Shen W Z 2012 Chin. Phys. Lett. 29 068101
[15] Deng Z, Jiang Y, Ma Z G, Wang W X, Jia H Q, Zhou J M and Chen H 2013 Sci. Rep. 3 3389
[16] Chang J Y, Chang Y A, Chen F M, Kuo Y T and Kuo Y K 2013 Photon. Tech. Lett. 25 55
[17] Du C H, Ma Z G, Zhou J M, Lu T P, Jiang Y, Zuo P, Jia H Q and Chen H 2014 Appl. Phys. Lett. 105 071108
[18] Yang J K, Wei T B, Hu Q, Huo Z Q, Sun B J, Duan R F and Wang J X 2015 Mater. Sci. Semicond. Proc. 29 357
[19] Ryu H Y, Kim H S and Shim J I 2009 Appl. Phys. Lett. 95 081114
[20] Osram opto semiconductor 2014 Press releases Website aviable at http://www.osram-os.com
[21] Hashimoto R, Hwang J I, Saito S and Nunoue S 2014 Phys. Status Solidi 11 628
[22] Shioda T, Yoshida H, Tachibana K, Sugiyama N and Nunoue S 2012 Phys. Status Solidi 209 473
[23] Hwang J I, Hashimoto R, Saito S and Nunoue S 2014 Appl. Phys. Express 7 071003
[24] Chen Y S, Yao L C, Lin Y L, Hung L, Huang C F, Tang T Y, Huang J J, Shiao W Y and Yang C C 2006 J. Cryst. Growth 297 66
[25] Huang C F, Tang T Y, Huang J J, Shiao W Y, Yang C C, Hsu C W and Chen L C 2006 Appl. Phys. Lett. 89 051913
[26] Huang C F, Liu T C, Lu Y C, Shiao W Y, Chen Y S, Wang J K, Lu C F and Yang C C 2008 J. Appl. Phys. 104 123106
[27] Shiao W Y, Huang C F, Tang T Y, Huang J J, Lu Y C, Chen C Y, Chen Y S and Yang C C 2007 J. Appl. Phys. 101 113503
[28] Detchprohm T, Zhu M W, Li Y F, Xia Y, Liu L, Hanser D and Wetzel C 2009 J. Cryst. Growth 311 2937
[29] Detchprohm T, Zhu M W, Li Y F, Zhao L, You S, Wetzel C, Preble E A, Paskova T and Hanser D 2010 Appl. Phys. Lett. 96 051101
[30] Detchprohm T, Zhu M W, Li Y F, Zhao L, You S, Wetzel C, Preble E A, Paskova T and Hanser D 2008 Appl. Phys. Lett. 92 241109
[31] Lin Y D, Chakraborty A, Brinkley S, Kuo H C, Melo T, Fujito K, Speck J S, DenBaars S P and Nakamura S 2009 Appl. Phys. Lett. 94 261108
[32] Jung S, Chang Y, Bang K H, Kim H G, Choi Y H, Hwang S M and Baik K H 2012 Semicond. Sci. Technol. 27 024017
[33] Chakraborty A, Haskell B A, Keller S, Speck J S, DenBaars S P, Nakamura S and Mishra U K 2004 Appl. Phys. Lett. 85 5143
[34] Chakraborty A, Baker T J, Haskell B A, Wu F, Speck J S, Denbaars S P and Mishra U K 2005 Jpn. J. Appl. Phys. 44 945
[35] Funato M, Ueda M, Kawakami Y, Narukawa Y, Kosugi T, Takahashi M and Mukai T 2006 Jpn. J. Appl. Phys. 45 L659
[36] Sato H, Chung R B, Hirasawa H, Fellows N, Masui H, Wu F and Nakamura S 2008 Appl. Phys. Lett. 92 221110
[37] Zhao Y, Sonoda J, Pan C C, Brinkley S, Koslow I, Fujito K and Nakamura S 2010 Appl. Phys. Express 3 102101
[38] Okamoto K, Ohta H, Nakagawa D, Sonobe M, Ichihara J and Takasu H 2006 Jpn. J. Appl. Phys. 45 L1197
[39] Zhong H, Tyagi A, Fellows N N, Wu F, Chung R B, Saito M, Fujito K, Speck J S, DenBaars S P and Nakamura S 2007 Appl. Phys. Lett. 90 233504
[40] Yamamoto S, Zhao Y, Pan C C, Chung R B, Fujito K, Sonoda J, DenBaars S P and Nakamura S 2010 Appl. Phys. Express 3 122102
[41] Liu J L, Feng F F, Zhou Y H, Zhang J L and Jiang F Y 2011 Appl. Phys. Lett. 99 111112
[42] Liu J L, Feng F F, Zhang J L, Jiang L and Jiang F Y 2012 Thin Solid Films 520 2155
[43] Wu X M, Liu J L, Quan Z J, Xiong C B, Zheng C D, Zhang J L and Jiang F Y 2014 Appl. Phys. Lett. 104 221101
[44] Quan Z J, Wang L, Zheng C D, Liu J L and Jiang F Y 2014 J. Appl. Phys. 116 183107
[45] Zhang J L, Xiong C B, Liu J L, Quan Z J, Wang L and Jiang F Y 2014 Appl. Phys. A 114 1049
[1] Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2023, 32(3): 037303.
[2] Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate
Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Chin. Phys. B, 2023, 32(3): 037201.
[3] Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage
Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Chin. Phys. B, 2023, 32(2): 027302.
[4] Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(2): 020701.
[5] Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si
Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Chin. Phys. B, 2023, 32(2): 028101.
[6] Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Chin. Phys. B, 2023, 32(1): 017306.
[7] Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets
Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Chin. Phys. B, 2023, 32(1): 018103.
[8] Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[9] Liquid-phase synthesis of Li2S and Li3PS4 with lithium-based organic solutions
Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Chin. Phys. B, 2022, 31(9): 098203.
[10] Mottness, phase string, and high-Tc superconductivity
Jing-Yu Zhao(赵靖宇) and Zheng-Yu Weng(翁征宇). Chin. Phys. B, 2022, 31(8): 087104.
[11] Inertial focusing and rotating characteristics of elliptical and rectangular particle pairs in channel flow
Pei-Feng Lin(林培锋), Xiao Hu(胡箫), and Jian-Zhong Lin(林建忠). Chin. Phys. B, 2022, 31(8): 080501.
[12] Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Chin. Phys. B, 2022, 31(7): 074206.
[13] Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes
Yi Li(李毅), Mei Ge(葛梅), Meiyu Wang(王美玉), Youhua Zhu(朱友华), and Xinglong Guo(郭兴龙). Chin. Phys. B, 2022, 31(7): 077801.
[14] Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate
Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(6): 068501.
[15] Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes
Ying-Zhe Wang(王颖哲), Mao-Sen Wang(王茂森), Ning Hua(化宁), Kai Chen(陈凯), Zhi-Min He(何志敏), Xue-Feng Zheng(郑雪峰), Pei-Xian Li(李培咸), Xiao-Hua Ma(马晓华), Li-Xin Guo(郭立新), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(6): 068101.
No Suggested Reading articles found!