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Chin. Phys. B, 2015, Vol. 24(12): 127801    DOI: 10.1088/1674-1056/24/12/127801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Liu Weia c, Zhao De-Ganga, Jiang De-Shenga, Chen Pinga, Liu Zong-Shuna, Zhu Jian-Juna, Li Xianga, Liang Fenga, Liu Jian-Pingb, Yang Huia b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
c School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China
Abstract  InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) with varying InGaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well (QW) thickness. When the QW is very thin, the increase of InGaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced non-radiative recombination process and the weak delocalization effect.
Keywords:  InGaN/GaN multiple quantum wells      light-emitting diode      efficiency droop      well thickness     
Received:  16 June 2015      Published:  05 December 2015
PACS:  78.66.Fd (III-V semiconductors)  
  78.67.De (Quantum wells)  
  85.60.Jb (Light-emitting devices)  
  78.60.Fi (Electroluminescence)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One-Hundred Person Project of the Chinese Academy of Sciences, the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362), the Scientific Research Fund of Chongqing Municipal Education Commission, China (Grant No. KJ131206), and the Natural Science Foundation of Chongqing Municipal Science and Technology Commission, China (Grant No. cstc2012jjA50036).
Corresponding Authors:  Zhao De-Gang     E-mail:  dgzhao@red.semi.ac.cn

Cite this article: 

Liu Wei, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Liu Zong-Shun, Zhu Jian-Jun, Li Xiang, Liang Feng, Liu Jian-Ping, Yang Hui Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode 2015 Chin. Phys. B 24 127801

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