The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

doi:10.1088/1674-1056/22/6/068802

Abstract InGaN/GaN p–i–n solar cells, each with an undoped In_0.12Ga_0.88N absorption layer, are grown on c-plane sapphire substrates by metal–organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaNbased solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.

Keywords: nitride materials crystal growth solar cell X-ray diffraction

Received: 20 August 2012
Revised: 30 October 2012
Accepted manuscript online:

PACS:	88.40.hj	(Efficiency and performance of solar cells)
	81.05.Ea	(III-V semiconductors)
	78.40.Fy	(Semiconductors)

Fund: Project supported by the National Natural Science Foundation for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, 61223005, and 61176126), and the National Basic Research Program of China (Grant No. 2007CB936700).

Corresponding Authors: Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn

Cite this article:

Li Liang (李亮), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Wang Hui (王辉), Yang Hui (杨辉) The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells 2013 Chin. Phys. B 22 068802

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The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

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