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Chin. Phys. B, 2011, Vol. 20(2): 026802    DOI: 10.1088/1674-1056/20/2/026802
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

Bao Ji-Minga, Wang Chongb, Li Liangb, Xiong Feib, Yang Yuc, Yang Rui-Dongd
a Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA; b Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; c Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA; d Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; Departm
Abstract  This paper reports that the Si+ self-ion-implantation are conducted on the silicon-on-insulator wafers with the 28Si+ doses of 7×1012, 1×1013, 4×1013, and 3×1014 cm-2, respectively. After the suitable annealing, these samples are characterized by using the photoluminescence technique at different recorded temperatures. Plentiful emission peaks are observed in these implanted silicon-on-insulator samples, including the unwonted intense P' band which exhibits a great potential in the optoelectronic application. These results indicate that severe transformation of the interstitial clusters can be manipulated by the implanting dose at suitable annealing temperatures. The high critical temperatures for the photoluminescence intensity growth of the two signatures are well discussed based on the thermal ionization model of free exciton.
Keywords:  photoluminescence      interstitial cluster      silicon-on-insulator      self-ion-implantation     
Received:  20 April 2010      Published:  15 February 2011
PACS:  68.35.Dv (Composition, segregation; defects and impurities)  
  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
  78.55.Ap (Elemental semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10964016), the Key Project of the Chinese Ministry of Education (Grant No. 210207), and the Natural Science Foundation of Yunnan University (Grant No. 2009E27Q).

Cite this article: 

Wang Chong, Yang Yu, Yang Rui-Dong, Li Liang, Xiong Fei, Bao Ji-Ming Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure 2011 Chin. Phys. B 20 026802

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