Abstract A novel vertical stack heterostructure CMOSFET is investigated, which is
structured by strained SiGe/Si with a hole quantum well channel in the
compressively strained Si$_{1 - x}$Ge$_{x}$ layer for p-MOSFET and an electron
quantum well channel in the tensile strained Si layer for n-MOSFET. The device
possesses several advantages including: 1) the integration of electron
quantum well channel with hole quantum well channel into the same vertical
layer structure; 2) the gate work function modifiability due to the
introduction of poly-SiGe as a gate material; 3) better transistor matching;
and 4) flexibility of layout design of CMOSFET by adopting exactly the same
material lays for both n-channel and p-channel. The MEDICI simulation result
shows that p-MOSFET and n-MOSFET have approximately the same matching
threshold voltages. Nice performances are displayed in transfer
characteristic, transconductance and cut-off frequency. In addition, its
operation as an inverter confirms the CMOSFET structured device to be normal
and effective in function.
Received: 02 February 2006
Revised: 16 March 2006
Published: 20 June 2006
PACS:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
