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Chin. Phys., 2006, Vol. 15(6): 1339-1345    DOI: 10.1088/1009-1963/15/6/035
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

Jiang Tao, Zhang He-Ming, Wang Wei, Hu Hui-Yong, Dai Xian-Ying
School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si$_{1 - x}$Ge$_{x}$ layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including: 1) the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2) the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3) better transistor matching; and 4) flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.
Keywords:  poly-SiGe gate      quantum well channel      heterostructure CMOSFET      strained SiGe/Si  
Received:  02 February 2006      Revised:  16 March 2006      Published:  20 June 2006
PACS:  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.20.At (Surface states, band structure, electron density of states)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.Le (Other inorganic semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Preresearch from National Ministries and Commissions (Grant Nos 51408061104DZ01, 51439010904DZ0101).

Cite this article: 

Jiang Tao, Zhang He-Ming, Wang Wei, Hu Hui-Yong, Dai Xian-Ying Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel 2006 Chin. Phys. 15 1339

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