Chinese Physics B 2009 author index
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
H
Hua Ning
Hu Shi-Gang
Hao Yue
Hu Shi-Gang
Hao Yue
Ma Xiao-Hua
Cao Yan-Rong
Chen Chi
Wu Xiao-Feng
Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature
Chin. Phys. B. 2009, 18 (12):5479
doi: 10.1088/1674-1056/18/12/058
Xu Zhi-Hao
Zhang Jin-Cheng
Zhang Zhong-Fen
Zhu Qing-Wei
Duan Huan-Tao
Hao Yue
The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures
Chin. Phys. B. 2009, 18 (12):5457
doi: 10.1088/1674-1056/18/12/054
Chen Jun-Feng
Hao Yue
A theoretical study of harmonic generation in a short period AlGaN/GaN superlattice induced by a terahertz field
Chin. Phys. B. 2009, 18 (12):5451
doi: 10.1088/1674-1056/18/12/053
Li Zhi-Ming
Hao Yue
Zhang Jin-Cheng
Xu Sheng-Rui
Ni Jin-Yu
Zhou Xiao-Wei
Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor
Chin. Phys. B. 2009, 18 (11):5072
doi: 10.1088/1674-1056/18/11/077
Gao Zhi-Yuan
Hao Yue
Zhang Jin-Cheng
Li Pei-Xian
Gu Wen-Ping
Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure
Chin. Phys. B. 2009, 18 (11):4970
doi: 10.1088/1674-1056/18/11/059
Feng Qian
Tian Yuan
Bi Zhi-Wei
Yue Yuan-Zheng
Ni Jin-Yu
Zhang Jin-Cheng
Hao Yue
Yang Lin-An
The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment
Chin. Phys. B. 2009, 18 (7):3014
doi: 10.1088/1674-1056/18/7/066
Zhang Jin-Cheng
Zheng Peng-Tian
Zhang Juan
Xu Zhi-Hao
Hao Yue
Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures
Chin. Phys. B. 2009, 18 (7):2998
doi: 10.1088/1674-1056/18/7/063
Fan Long
Hao Yue
Zhao Yuan-Fu
Zhang Jin-Cheng
Gao Zhi-Yuan
Li Pei-Xian
Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)
Chin. Phys. B. 2009, 18 (7):2912
doi: 10.1088/1674-1056/18/7/049
Gu Wen-Ping
Duan Huan-Tao
Ni Jin-Yu
Hao Yue
Zhang Jin-Cheng
Feng Qian
Ma Xiao-Hua
High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors
Chin. Phys. B. 2009, 18 (4):1601
doi: 10.1088/1674-1056/18/4/052
Cao Yan-Rong
Hao Yue
Ma Xiao-Hua
Hu Shi-Gang
Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors
Chin. Phys. B. 2009, 18 (1):309
doi: 10.1088/1674-1056/18/1/050
Huang Yuan
HL-2A Team
Hasi Wu-Li-Ji
He Wei-Ming
Hu Yao-Hua
Han Yan-Hua
Han Jiu-Rong
He Feng
Han Feng
Hu Li-Yun
Huang Si-Xun
Huang Wei-Qi
Huang Wan-Guo
Hu Feng-Lan
Hao Bao-Tian
He De-Yan
Huang Hui-Chang
He Ying-Ji
H. D. Summers
Huang Xue-Ren
Han Yong-Chang
Hu Wen-Hui
Han He-Tong
Han Li-Hong
Huang Fei
Hang Fu-Chun
Han Guo-Cai
Huang Ping
He Shi-Kun
Han Ping
Huang Ru
Hu Wei
Hao Zuo-Qiang
Hu Bi-Tao
Hu Wen-Bo
Han Xiu-Feng
Huang Xiao-Jing
He Yi-Gang
Hu Yong-Hua
Hu Min
Han Xian-Wei
Hu Jiang-Ping
Huang Yan-Xia
Huang Jun-Jie
Hsu Hou-Tse
Huang Li-Xin
Han Xiang-Hua
Han Xiao-Yan
Hou Guo-Fu
Huang Hai-Tao
Hu Liang-Bin
H. Epik
H. Sar
Han Chao
Hu Xi-Wei
Hong Wen-Yu
Huang Min
He Jun
Han Yang
Hu Xiao-Hong
Han Li-Bo
Huang Wen-Hua
He Chao
Han Xiao-Dong
Huang Rui
Hu Hao
He Man-Chao
Huang Chang-Chun
He Jun-Feng
Hu Miao
Huang Yi-Fan
Han Xu-Biao
Hou Xi-Wen
He Hong-Di
Hou Min-Jie
He Ji-Rong
Huang Jian-Fei
Hu Bo
Hu Jing-Guo
Hu Yi-Bin
Hu Dong-Sheng
Huang She-Song
Hu Mu-Hong
Huang Shan-Shan
He Hua-Hui
He Wei-Yu
He Qing
Hu Jiu-Ning
Huang Sen
Hou Lan-Tian
Huang Zheng
Hong Rong-Jie
He Xiao-Dong
Han Bing
Han Zheng-Fu
He Ji-Cheng
He Xun-Jun
Hui Meng
Hu Yue
Hu Fei-Fei
Hu Zhan
He Xing
He Ming
Huang Zhi-Fu
Hu Jian-Ming
Hu Yong-Hong
Han Xiao-Yun
Huang Wei
Hu Mao-Bin
He Ji-Zhou
Huang Hai-Jun
He Zhang-Ming
Hsu Hung-Chu
Hu Ping
Hu Hai-Yun
Hu Wen-Juan
Han Man-Gui
Huo Hai-Liang
He Liang-Ming
Han Hai-Nian
He Duan-Wei
Hou Tao
Hao Yan-Hua
Hu Hui-Yong
Hou Peng
Hou Yu-Jun
Han Fang
He Heng-Pan
Hu Xiao-Mian
Han Yi-Wen
Hong Yun
Hong Pei-Lin
Hu Sheng-Dong
Huang Kun
Hu Zheng-Feng
He Hui-Juan
Han Ke-Li