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Chin. Phys. B, 2009, Vol. 18(9): 03966    DOI: 10.1088/1674-1056/18/9/057
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

He Yi-Ganga, Lu Ai-Xiab, Wan Qingb, Zhou Yu-Mingc
a College of Electrical and Information Engineering, Hunan University, Changsha 410082, China; b College of Physics and Microelectronic, Hunan University, Changsha 410082, China; c College of Physics and Microelectronic, Hunan University, Changsha 410082, China;College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
Abstract  The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle, so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.
Keywords:  ZnO thin film transistor      grain boundary      simulation     
Received:  15 February 2009      Published:  20 September 2009
PACS:  85.30.Tv (Field effect devices)  
  61.72.Mm (Grain and twin boundaries)  
  73.61.Ga (II-VI semiconductors)  
Fund: Project was supported by the National Natural Science Foundation of China (Grant Nos 50677014, 50602014 and 10874042), the National High Technology Joint Research Program of China (Grant No 2006AA04A104), the Science-Technology Foundation of Hunan Province of China (Grant Nos 2008RS4003 and 07jj107).

Cite this article: 

Zhou Yu-Ming, He Yi-Gang, Lu Ai-Xia, Wan Qing Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary 2009 Chin. Phys. B 18 03966

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