Abstract This paper reports that the Schottky barrier height modulation of NiSi/n-Si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique, which avoids the damage to the NiSi/Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF2 implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by silicide-as-diffusion-source technique. Besides, the electron Schottky barrier height is successfully modulated by 0.11 eV at a boron dose of 1015 cm-2 in comparison with the non-implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source technique for the fabrication of Schottky source/drain Si MOS devices.
Received: 27 February 2009
Revised: 02 April 2009
Accepted manuscript online:
(Surface barrier, boundary, and point contact devices)
Fund: Project
supported by the National Natural Science Foundation of China (Grant
Nos 60625403, 60806033, 90207004), the State Key Development Program
for Basic Research of China (Grant No
2006CB302701) and the NCET Program.
Cite this article:
An Xia(安霞), Fan Chun-Hui(范春晖), Huang Ru(黄如), Guo Yue(郭岳), Xu Cong(徐聪), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元) The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique 2009 Chin. Phys. B 18 4465
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