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Chin. Phys. B, 2009, Vol. 18(9): 4025-4029    DOI: 10.1088/1674-1056/18/9/068
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Role of defects in magnetic properties of Fe-doped SnO2 films fabricated by the Sol--Gel method

Zhou Xue-Yun(周雪云)a)†ger, Ge Shi-Hui(葛世慧)a)‡ger, Han Xiu-Feng(韩秀峰)b), Zuo Ya-Lu(左亚路)a), Xiao Yu-Hua(肖玉华)a), Wen Zhen-Chao(温振超)b), Zhang Li(张莉)a), and Li Ming-Jie(李明杰)a)
a Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China; b State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  This paper obtains the room temperature ferromagnetism in Sn1-xFexO2 films fabricated by the Sol--Gel method. X-ray diffraction results show that Fe doping inhibits the growth of SnO2 and Fe3+ ions occupy the Sn sites. The measurement of resistance excludes the free carrier inducing ferromagnetism. Moreover, the temperature dependence of magnetization has been better fitted by the Curie--Weiss law and bound magnetic polaron (BMP) theory. An enhancement of ferromagnetism is achieved by annealing the samples with x=7.1% in H2, and a decrease of oxygen flow rate. All these results prove that the BMP model depending on defects can explain ferromagnetism in diluted magnetic oxides.
Keywords:  diluted magnetic oxides      BMP model      defects  
Received:  12 September 2008      Revised:  10 October 2008      Accepted manuscript online: 
PACS:  81.20.Fw (Sol-gel processing, precipitation)  
  75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))  
  75.50.Dd (Nonmetallic ferromagnetic materials)  
  75.50.Pp (Magnetic semiconductors)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  81.40.Gh (Other heat and thermomechanical treatments)  

Cite this article: 

Zhou Xue-Yun(周雪云), Ge Shi-Hui(葛世慧), Han Xiu-Feng(韩秀峰), Zuo Ya-Lu(左亚路), Xiao Yu-Hua(肖玉华), Wen Zhen-Chao(温振超), Zhang Li(张莉), and Li Ming-Jie(李明杰) Role of defects in magnetic properties of Fe-doped SnO2 films fabricated by the Sol--Gel method 2009 Chin. Phys. B 18 4025

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