Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings
Liu Yu-Min(刘玉敏)†,Yu Zhong-Yuan(俞重远),Jia Bo-Yong(贾博雍), Xu Zi-Huan(徐子欢),Yao Wen-Jie(姚文杰),Chen Zhi-Hui(陈智辉), Lu Peng-Fei(芦鹏飞), and Han Li-Hong(韩利红)
Institute of Optical Communication and Optoelectronics, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876, China
Abstract This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass Schr?dinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.
Received: 31 July 2008
Revised: 13 April 2009
Accepted manuscript online:
PACS:
73.21.-b
(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
Fund: Project supported by the National
High Technology Research and Development Program of China (Grant No
2009AA03Z405), the National Natural Science Foundation of China
(Grant Nos 60908028 and 60971068) and the High School Innovation and
Introducing Talent Project of China (Grant No B07005).
Cite this article:
Liu Yu-Min(刘玉敏),Yu Zhong-Yuan(俞重远),Jia Bo-Yong(贾博雍), Xu Zi-Huan(徐子欢),Yao Wen-Jie(姚文杰),Chen Zhi-Hui(陈智辉), Lu Peng-Fei(芦鹏飞), and Han Li-Hong(韩利红) Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings 2009 Chin. Phys. B 18 4667
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