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Chin. Phys. B, 2009, Vol. 18(8): 03490    DOI: 10.1088/1674-1056/18/8/059
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

Zhang Lin, Zhang Yi-Men, Zhang Yu-Ming, Han Chao, Ma Yong-Ji
School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with 1~MeV electrons up to a dose of 3.43× 1014~e/cm-2. After radiation, the forward currents of the SBDs at 2~V decreased by about 50%, and the reverse currents at -200~V increased by less than 30%. Schottky barrier height (φ B ) of the Ni/4H-SiC SBD increased from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased from 1.25~eV to 1.19~eV under -30~V irradiation bias. The degradation of φ B could be explained by the variation of interface states of Schottky contacts. The on-state resistance (Rs) and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance (\rhoc) of the Ni/SiC Ohmic contact increased from 5.11× 105~Ωega.cm2 to 2.97× 10-4~Ωega.cm2.
Keywords:  electron radiation      Schottky barrier diode      Ohmic contact      silicon carbide  
Received:  08 December 2008      Revised:  19 March 2009      Published:  20 August 2009
PACS:  85.30.Kk (Junction diodes)  
  61.80.Fe (Electron and positron radiation effects)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.Cg (Contact resistance, contact potential)  
  73.40.Ns (Metal-nonmetal contacts)  
Fund: Project~supported~by~the National Natural Science Foundation of China (Grant No 60606022), the Xian Applied Materials Foundation (Grant No XA-AM-200702) and the Advanced Research Foundation (Grant No 9140A08050508).

Cite this article: 

Zhang Lin, Zhang Yi-Men, Zhang Yu-Ming, Han Chao, Ma Yong-Ji High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact 2009 Chin. Phys. B 18 03490

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