Abstract Zn1-xMnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn1-xMnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons (BMPs) play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170 K. At low temperature, paramagnetic Zn1-xMnxO bulks show a large magnetoresistance effect, which indicates that the large magnetoresistance effect in transition-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states.
Received: 06 January 2009
Revised: 06 March 2009
Accepted manuscript online:
Peng Xian-De(彭先德), Zhu Tao(朱涛), Wang Fang-Wei(王芳卫), Huang Wan-Guo(黄万国), and Cheng Zhao-Hua(成昭华) The electrical transport behavior of Zn-treated Zn1-xMnxO bulks 2009 Chin. Phys. B 18 2576
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