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Chin. Phys. B, 2009, Vol. 18(6): 02258    DOI: 10.1088/1674-1056/18/6/025

Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

Jia Ruia, Niu Zhi-Chuanb, Yang Fu-Huab, Dou Xiu-Mingc, Sun Bao-Quanc, Huang She-Songc, Ni Hai-Qiaoc
a Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show ``binding'' and ``antibinding'' properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler--London method.
Keywords:  single quantum dots      exciton molecular model      biexcition binding energy      Heitler--London method  
Received:  27 June 2008      Revised:  27 November 2008      Published:  20 June 2009
PACS:  73.21.La (Quantum dots)  
  68.37.Ps (Atomic force microscopy (AFM))  
  71.35.-y (Excitons and related phenomena)  
  73.20.Mf (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))  
  78.55.Cr (III-V semiconductors)  
  78.67.Hc (Quantum dots)  
Fund: Project supported by the National Natural Science Foundations of China (Grant Nos O69C041001 and 2007CB924904).

Cite this article: 

Dou Xiu-Ming, Sun Bao-Quan, Huang She-Song, Ni Hai-Qiao, Niu Zhi-Chuan, Yang Fu-Hua, Jia Rui Size dependence of biexciton binding energy in single InAs/GaAs quantum dots 2009 Chin. Phys. B 18 02258

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